AO4821_101

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AO4821_101 is a 100V single N-channel metal oxide semiconductor field effect transistor (MOSFET). It is designed for a wide array of general purpose load switching and level shifting applications. It operates over a wide range of temperatures and offers high efficiency, low on-state resistance, and fast switching speeds.

Applications

AO4821_101 is commonly used in a variety of applications, such as switching power sources, and load switching. It is also used in level shifting and charging applications. These applications can be found in a variety of industrial, automotive, telecommunication, and consumer electronics.

Manufacturing Background

AO4821_101 is manufactured using a process called PBT-on-tungsten technology. This method reduces processing time and cost, while providing superior electrical performance. The reduction in processing time is due to the use of a single metal layer instead of multiple metal layers. This allows for the formation of more sophisticated metal-oxide-semiconductor (MOS) structures.

Features

AO4821_101 is designed for load switching and level shifting applications and offers a wide range of features. It has a drain-sourse breakdown voltage of 100V, an on-state resistance of 0.67 ohms, a threshold voltage of 2.5V,a reversed biased leakage current of 4mA, and an thermal resistance of 330K/W. It also features a fast switching speed of 8ns and a high maximum gain of 100.

Working Principle

The working principle of AO4821_101 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure. A MOSFET is composed of a source, a drain, and a gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modulates the current flow between the source and the drain. The current flow is determined by the voltage applied to the gate and the characteristics of the channel. AO4821_101 is an n-type MOSFET and performs load switching and level shifting functions by controlling the current flowing through the channel.

In a load switching application, AO4821_101 is used to switch on and off a load. This is accomplished by applying a voltage to the gate electrode, which manipulates the current flow between the source and drain. In a level shifting application, AO4821_101 is used to convert a low voltage signal to a higher voltage signal. The voltage is converted through the varying the gate voltage, which modulates the current flow between the source and drain.

Conclusion

AO4821_101 is a 100V single N-channel metal oxide semiconductor field effect transistor (MOSFET). It is designed for a wide array of general purpose load switching and level shifting applications. It offers high efficiency, low-on state resistance, fast switching speeds, and a wide range of features. The working principle of AO4821_101 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure, which is used for load switching and level shifting applications.

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