Allicdata Part #: | AO4812_101-ND |
Manufacturer Part#: |
AO4812_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 30V 6A |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6A 2W Surface ... |
DataSheet: | AO4812_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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AO4812_101 is an application field and working principle of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has been developed by Alpha & Omega Semiconductor. It is an ideal electro-thermal solution for its excellent thermal characteristics, low on-state resistance, and wide temperature range. This device is a member of a broad family of transistors designed for use in a variety of applications, including industrial, automotive, consumer, and telecommunications systems.
A MOSFET is a type of transistor that conducts current in only one direction and can be operated in either an “ON” or “OFF” state. It consists of three terminals, namely drain, gate, and source. The drain and source terminals of a MOSFET are equivalent to the emitter and collector terminals of a bipolar junction transistor. The gate of a MOSFET is used to control the current being passed through the device by using the voltage applied to it.
AO4812_101 is an array of eight N-channel power MOSFETs with a drain-to-source breakdown voltage of 100 volts. The maximum drain current of each transistor is rated at 100mA with a maximum on-state resistance of 0.13 ohms. The package of the device is modified TO-223 and it is compact in size. The operating temperature range of the device is -55°C to +150°C.
When voltage is applied to the gate of the AO4812_101 device, an electric field is formed between the gate and the channel region that controls the flow of electrons between the source and drain terminals. This process is known as “gating”, and it is what enables the MOSFET to function as a switch. The gate of the MOSFET is isolated from the channel region and the gate voltage has no effect on the channel current.
When the gate voltage is increased, the electric field becomes stronger and more charge carriers are allowed through the channel region, which reduces the resistance and increases the channel current. Thus, by applying the appropriate gate voltage, one can control the current flowing through the MOSFET device and use it as an amplifier or switch in various applications.
AO4812_101 is ideally suited for use in various power control applications such as motor control, power switching, solenoid control, motor drives, and in power supplies. It can also be used in automotive and telecom systems, domestic appliances, and lighting applications.
This device is especially suited for applications where less power dissipation is desired and lower on-state resistance is necessary. The reduced power dissipation and on-state resistance of the AO4812_101, enable it to handle higher transient currents and enable higher switching frequencies, thus allowing system designers to design more efficient and cost effective products.
The specific data is subject to PDF, and the above content is for reference
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