AO4803A Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AO4803A is a Dual N-Channel enhancement-mode MOSFET, with a fixed operating temperature range from 40C to 125C. This product is designed and developed for use in high frequency switching, power management, C3/C3B, PWM control, RF power amplifiers and other applications. AO4803A provides an easy and flexible solution for circuit designers. The superior performance of AO4803A is based on its advanced, developed process technology and optimized packages.

In terms of application field, the AO4803A has a wide range of applications, including:

• High Frequency Switching
• Power Management
• C3/C3B
• PWM Control
• RF Power Amplifiers
• Selective FM Discriminator
• Microprocessor Peripherals
• PC Power Supply

The AO4803A features a low on-resistance RDS(ON) of 110 milliohms and a low threshold voltage VGS of -0.6V. It also has a maximum drain current of up to 17A and a maximum drain-source breakdown voltage of 20V. AO4803A is designed with a high-current, high speed BoostFET MOSFET technology and uses an advanced silicon nitride passivation to enhance the performance. The AO4803A is offered in surface-mount packages, making it suitable for high-density circuit board applications.

In terms of the working principle of AO4803A, it is based on the principles of voltage-increase switching. This means that the gate voltage of the transistor is increased above the threshold voltage, causing the channel between the source and drain to open and allow current to flow. Voltage-increase switching is commonly used to control the speed or power of an application. This is done by controlling the gate voltage of the MOSFET with an external device, such as a microprocessor.

The voltage-increase switching method utilized by the AO4803A is also called "zener operation", as the threshold voltage is higher than the gate-drain diode drop. The main advantages of this method are its speed and power efficiency. Additionally, the AO4803A is designed for low power dissipation and high temperatures. This makes it a great choice for use in power management design.

AO4803A also features an optimized package design. This includes lead frames that are arranged in a dual-row, five-column array. The package also features a simple layout, with fewer pins and easy to access source, drain and gate connections. Additionally, AO4803A features an optimized package inductance, which minimizes switching loss and improves electrical transit time.

All in all, the AO4803A is a great choice for any application that requires high-frequency switching, power management and PWM control. It provides an easy and flexible solution for circuit designers, with clear advantages in terms of its high performance and optimized package design. With its advanced silicon nitride passivation, low RDS(ON) and high current capability, the AO4803A is ideally suited for both high-current and high-temperature applications.

The specific data is subject to PDF, and the above content is for reference