AO4826

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO4826 are N-channel enhancement mode power field effect transistors (FETs) inside a lead frame package with source, drain and gate terminals. This technology, a combination of DMOS design and thin-film resistor, enables a high level of performance, combining low RDS(ON) and low gate charge with improved avalanche energy hardness for high voltage applications.

AO4826 are produced using advanced PowerTrench MOSFET technology in a standard SO-8 surface mountable package. It has two drain pins for improved thermal dissipation and it is designed for use as a load switch or in PWM applications. This part is optimized for a very low RDS(ON) to minimize the conduction losses and provide efficient performance.

AO4826 is a P-channel FET array at the heart of a power supply switching solution. It contains four FETs connected in series, each operating at 45 mA peak. It is optimized for low quiescent currents, very low RDS(ON) and low gate charge for improved efficiency and lower power consumption. The device is designed for use in a buck converter application, allowing for high frequency switching with improved performance.

The AO4826 is designed to eliminate the need for a low-voltage regulator as it can switch between high and low states without an external voltage reference. This makes it ideal for use in low-voltage applications, such as battery powered circuits. It also has an integrated overvoltage protection feature which protects the FETs from voltage transients when switching between high and low states.

AO4826 works by using N-channel MOSFETs arranged in a four-stage cascade. The circuit is powered by a +45V supply and has a current limit set by R1, which is adjustable. When an input voltage is applied to the gate of each FET, the drain current flows. This arrangement is also known as a N-MOSFET cascode configuration and is typically used for generating high output currents.

When a voltage is applied to the gate of the first FET, it turns on and the current starts to flow from the drain to the source. This current can reach a maximum of 45 mA, which is limited by R1. The drain current flows through the second FET, which is also turned on and its junction is at exactly the same voltage as the first FET. This is followed by the third and fourth FETs, with each of them increasing the total available current.

The FETs are connected in a sequence that allows the overall current gain to be increased. This helps reduce the voltage drop across the power supply as the total current load increases. It also ensures that the FETs remain in the linear operating region, reducing power losses and improving efficiency.

In summary, the AO4826 is a low-power field effect transistor array ideal for use in battery-powered applications. It is optimized for low gate charge and low RDS(ON) for improved efficiency and lower power consumption. The integrated overvoltage protection prevents damage due to voltage transients. The FETs are connected in a cascade configuration allowing for high frequency switching and improved performance.

The specific data is subject to PDF, and the above content is for reference