AO4854L_102 Allicdata Electronics
Allicdata Part #:

AO4854L_102-ND

Manufacturer Part#:

AO4854L_102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 8A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: AO4854L_102 datasheetAO4854L_102 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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AO4854L_102 is a power integrated FET array, namely a 5-channel P-MOSFET array. This array is composed of 5 identical MOSFET units with a low on-resistance and a high current rating, making it a highly effective solution for dissipation of power in a wide range of electronic applications.

AO4854L_102 can provide significant design flexibility in areas such as power management and motor control. The presence of 5 FET array devices, each of which can be separately turned on or off, allows designers to configure the power system more efficiently, reducing the risk of thermal damage and improving system efficiency. Moreover, the FET array can be also used in power management systems and motor control solutions, as each FET unit can be used for voltage and current control.

The working principle of AO4854L_102 is similar to a resistive-type MOSFET or transistor, in that it uses the mobile charge carriers in the Gate oxide region to control the flow of an electric current. When a positive voltage is applied to the Gate terminal, it creates an electric field that attracts the carriers, thereby reducing the resistance of the device and allowing current to flow. Conversely, when a negative voltage is applied, the electric field repels the carriers, and the resistance of the device increases, thus, turning off the current.

AO4854L_102 provides significant design advantages over traditional MOSFETs. For example, the much lower on-resistance, compared to other devices of similar size, allows the AO4854L_102 to generate much higher currents while dissipating less heat. Additionally, the FET array has been made with an improved layout that helps reduce parasitic capacitance and inductance—the two largest contributors to energy losses. This improve layout allows for better current distribution and hence improved efficiency. Due to these advantages the AO4854L_102 has become the preferred choice for high-experience applications.

In summation, AO4854L_102 is a power integrated FET array suitable for a range of electronic applications such as power management and motor control The FET array is composed of 5 identical MOSFET units, each of which can be separately turned on or off, rendered easier with its on-resistance and improved layout over traditional MOSFET arrays to provide better performance and higher efficiency.

The specific data is subject to PDF, and the above content is for reference

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