AO4852L Allicdata Electronics
Allicdata Part #:

AO4852L-ND

Manufacturer Part#:

AO4852L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 60V 3A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 3A 1.4W Surfac...
DataSheet: AO4852L datasheetAO4852L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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AO4852L is one of the most commonly used semiconductor device in the world. This device is a metal-oxide-semiconductor field-effect transistor (MOSFET) array with a low on-resistance and fast switching time. Introduced by Alpha and Omega Semiconductor Inc. in 2020, the AO4852L has quickly become one of the most widely used MOSFET arrays, thanks to its low power consumption and easy to use design.

Applications

The AO4852L is used in many power electronic applications where fast switching times are required. It is used in a wide range of products, such as switch mode power supplies, motor control circuits, power inverters, and lighting control systems. With its low on-resistance of 36 mΩ, the AO4852L is also suitable for driving high power loads. Thanks to its low power consumption and easy to use design, the AO4852L is also a popular choice for console and automotive applications.

Working Principle

The AO4852L is an n-channel MOSFET array which is able to control a wide range of voltages and currents. The device is composed of four powerful MOSFET transistors, each with a low on-resistance of 36 mΩ and a maximum drain-source breakdown voltage of 40 V. The device is designed to provide low “on” resistance, which reduces the power consumption of the circuit and increases the efficiency of the switching process. The fast switching time of the AO4852L allow it to be used in high frequency applications (up to 2.5 GHz).

When the gate voltage is high, the electrons in the semiconductor channel of the device are attracted, allowing current to flow from the drain to the source. When the gate voltage is low, the electrons are repelled, and current is blocked.

Conclusion

The AO4852L is an easy to use, low power consumption, and high efficiency MOSFET array. With its low on-resistance and fast switching time, the AO4852L is the ideal choice for applications where fast switching times and low power consumption are required. It is suitable for switching low to medium power loads in applications such as power supplies, motor control circuits, power inverters, and lighting control systems.

The specific data is subject to PDF, and the above content is for reference

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