AO4818L

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The AO4818L is a high voltage, low RDS (ON) array, which was developed by Alpha and Omega semiconductors, Inc. It is a low threshold voltage, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) array that is suitable for high voltage and large current applications. It comes in an 8-pin Outline Package that is very easy to use.

The operating voltage of this array is up to ±20 V, with a peak source current of up to 16 A. It has an RDS (ON) of as low as 20 mΩ and an ultra-low gate charge (QG) to minimize switching losses and to offer better efficiency in a power system. The AO4818L is built using an advanced silicon-based process which produces low on-resistance and low thermal resistance. This makes the device capable of dissipating considerable power dissipation while offering high system efficiency.

The AO4818L is suitable for a wide range of applications, such as high voltage power supplies and motor drivers. The device\'s low RDS (ON) and high performance characteristics make it optimum for applications where output current tracks with input voltage. The AO4818L is also suitable for applications related to battery charging, regulated current, DC-DC converters, and power amplifiers.

The AO4818L is an array of low threshold voltage Mosfets with 8 pins. Each half-bridge power N-channel MOSFET, which is configurable in Half-Bridge and full-bridge configurations, has its own gate control inputs and high and low side outputs. The high side gate input allows for voltage level control, which results in improved performance, efficiency and speed of the device. The low side gate input operates as a variable resistance to control the current source.

The AO4818L features low gate charge and low RDS (ON) to minimize losses, allowing for improved efficiency and better system performance. This device also offers short circuit protection through its integrated boot strap circuit. This ensures the safety of the device if it is subjected to short circuit conditions. Additionally, it also offers high side enabling through its built in delay circuit.

The AO4818L is built on a process that combines the benefits of advanced silicon and oxide technologies. The oxide technologies allow for a low power threshold voltage, while the silicon processes provide improved performance and advanced feature set. This integrated dual technology makes the device suitable for high voltage and high current applications, such as motor drives, DC-DC converters, power amplifiers, and regulated current sources.

In conclusion, the AO4818L is an ideal choice for a wide range of applications requiring high voltage and large current. It features advanced features such as low gate charge, low RDS (ON), and short circuit protection. This device also offers high side enabling and integrated boot strap circuits for improved efficiency and system performance. Furthermore, its built-in dual-tech process ensures reliability and excellent performance.

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