AOB414 Discrete Semiconductor Products |
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Allicdata Part #: | 785-1209-2-ND |
Manufacturer Part#: |
AOB414 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 51A D2PAK |
More Detail: | N-Channel 100V 6.6A (Ta), 51A (Tc) 2.5W (Ta), 150W... |
DataSheet: | AOB414 Datasheet/PDF |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta), 51A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AOB414, also known as a symmetrical power MOSFET, is a type of insulated gate field-effect transistor (IGFET) designed for performance, versatility and building-block compatibility with other power components in the power MOS family. It has a higher on-resistance to gate voltage ratio than other MOSFETs and is basic to power cells and circuits, such as audio and video switching and power supplies.
The AOB414 is a field effect transistor (FET) with an insulated gate. It has a linear relationship between its gate voltage and the drain current. The AOB414 is a unipolar power device with a single input terminal, the gate, and two output terminals, the source and drain. These output terminals operate on opposite sides of the major-type junction. The gate terminal is insulated from the other two terminals by a dielectric material.
An important feature of an insulated gate power MOSFET is that when a gate voltage is applied, the source and drain voltages remain the same, while the drain current increases in proportion to the gate voltage applied. This allows a high gate to source current ratio, making it ideal for use in audio and video switching and power supplies. In essence, the AOB414 works like a voltage-controlled resistor — it modulates the current flow through the FET between the source and drain terminals.
The typical applications of an AOB414 MOSFET include high-power switching, high-voltage switching, and high frequency switching applications. It is commonly used in motor drives, power conversion, motor control, communication systems, medical equipment and other high power, high voltage switching applications. These types of MOSFETs can handle high-ripple currents, high-linear currents, and low-conductance offsets. The AOB414 also exhibits excellent on-state and off-state linearity.
Although the AOB414 has a wide variety of applications, its operating principle is the same. The FET\'s gate is connected to its source, while the drain is connected to its source via a resistor. When a positive voltage is applied to the gate, the source and drain act as a "switch". A current is generated in the resistor, proportional to the drain to source voltage. The resistor acts as a current control element. As the control voltage of the gate increases, more current flows through the resistor, and more voltage is applied at the drain. This is called the "on-state" of the FET, and is used in switching applications.
In the off-state, the current is off and no voltage appears at the drain. This is achieved by applying a negative voltage to the gate. This negative voltage prevents the gate from attracting electrons from the drain, thus no current is conducted. This is the ideal state for FETs that are used for protection and for their low-power characteristics.
The AOB414 is a versatile and reliable MOSFET that has a wide range of applications in switching and power supply design. It has excellent linearity, high-frequency characteristics, and low-conductance offsets. Its availability also makes it suitable as a basic building block in many types of power cells and circuits.
The specific data is subject to PDF, and the above content is for reference
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