AOB480L Discrete Semiconductor Products |
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| Allicdata Part #: | 785-1213-2-ND |
| Manufacturer Part#: |
AOB480L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 80V D2PAK |
| More Detail: | N-Channel 80V 15A (Ta), 180A (Tc) 1.9W (Ta), 333W ... |
| DataSheet: |  AOB480L Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | SDMOS™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7820pF @ 40V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.9W (Ta), 333W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 (D²Pak) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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The AOB480L is a single field-effect transistor (FET) that is commonly used in electronics applications. It is available in two package styles – a TO-220 package and two surface-mount packages. The device is a relatively low-voltage and low-power FET, so it is ideal for use in digital and low-voltage logic applications. It is also suitable for use in various applications such as driving small motors, controlling the charging of small batteries, and regulating current in circuits.The AOB480L is capable of withstanding higher levels of voltage than many other types of FET, which makes it useful for applications requiring higher power levels. It is also highly reliable and has a long lifetime.The AOB480L operates as a switch in an electrical circuit, allowing or blocking the flow of current in an on or off state. It consists of two terminals connected by a semiconductor, and the electrical behavior is determined by the terminal voltage difference. A positive voltage applied to the "gate" terminal of the FET will attract electrons to the semiconductor and the current will flow. Conversely, a negative voltage applied to the gate terminal of the FET will repel electrons and prevent the current from flowing.The semiconductor material used in the AOB480L is an alloy of silicon and germanium. Germanium is used because it has a low "threshold" voltage; it only requires a small amount of voltage to turn on the transistor. The addition of silicon results in the transistor remaining off until a certain threshold level of voltage is applied. This design ensures that the transistor will not turn on unintentionally.The AOB480L is designed to operate over a range of temperatures from -55 to +125 degrees Celsius, with a breakdown voltage of 30 volts. It also has a very low on-state resistance of only 0.5 ohms and a warm-up time of 1 microsecond.Overall, the AOB480L is a versatile and extremely useful FET that can be used for applications requiring low-voltage and low-power operation, as well as those requiring higher levels of power. Its ability to withstand higher voltage levels and its long lifetime make it an ideal choice for a variety of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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