Allicdata Part #: | AOB470L-ND |
Manufacturer Part#: |
AOB470L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 75V 10A TO263 |
More Detail: | N-Channel 75V 10A (Ta), 100A (Tc) 2.1W (Ta), 268W ... |
DataSheet: | AOB470L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 268W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5640pF @ 30V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 136nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AOB470L is a single-channel MOSFET with very high switching performance and low on-state resistance. It is designed to be operated in a high-power automotive environment and can handle up to 500 W of sustained output power. It is widely used in applications such as motor control, power switching, power conversion, and audio power amplification.
A MOSFET is an insulated-gate field-effect transistor, and it is the building block of many integrated circuits. The AOB470L is constructed with a single high-quality control electrode, which is sandwiched between two silicon dielectrics or insulating layers. When voltage is applied to the gate electrode, an electric field is generated between the gate and the semiconductor material, creating a "gate-to-source" resistance that serves to control the flow of current between the source and the drain electrodes.
The AOB470L has a low thermal resistance, allowing it to dissipate heat efficiently and reduce thermal stress on the device. It also provides fast switching performance, making it suitable for high frequency applications. The device operates at supply voltages up to 30 V and drain-source voltages up to 30 V, making it safe to use in high power applications. It has an integrated gate-source ESD protection diode to protect the device from high voltage spikes.
In terms of its working principle, the AOB470L is based on the principle of metal oxide semiconductor technology. It uses a thin layer of insulating oxide on a metal gate to control the flow of current between the source and the drain. It works by applying voltage to the gate electrode, which creates an electric field between the gate and the semiconductor material. As the gate voltage increases, so does the electric field strength, which in turn lowers the resistance between the source and the drain, allowing current to flow.
The AOB470L is an extremely useful and reliable MOSFET device with many potential applications. It is ideally suited for use in motor control, power switching, power conversion, and audio power amplification. It can handle high frequencies up to 300 kHz, high supply voltages up to 30 V, and low on-state resistance, making it an excellent choice for high power applications. With its fast switching performance, integrated gate-source ESD protection diode, and low thermal resistance, the AOB470L is the perfect choice in applications where long-term reliability and performance are critical.
The specific data is subject to PDF, and the above content is for reference
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