AOB418L Discrete Semiconductor Products |
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Allicdata Part #: | 785-1211-2-ND |
Manufacturer Part#: |
AOB418L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 105A D2PAK |
More Detail: | N-Channel 100V 9.5A (Ta), 105A (Tc) 2.1W (Ta), 333... |
DataSheet: | AOB418L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 333W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 50V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 9.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 105A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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AOB418L is a type of single MOSFET which is widely used for power related applications. It is capable of handling moderate power supply ratings, and offers a low on-state resistance and a very low input power requirements. The AOB418L is designed for applications where high input power, high current levels and small switching times are needed.
The AOB418L is classified as an n-channel enhancement-mode power MOSFET, and it is constructed using a number of layers of epitaxial silicon. The drain and source are made of nickel-coated polysilicon, while the gate is formed with a sheet of polysilicon as a gate oxide.
The AOB418L is most commonly used in applications where a high input power, high current level and a low on-state resistance is required. This includes power supplies, amplifiers, DC motors and servos. In addition, the AOB418L can also be used in automotive, industrial and medical applications.
The AOB418L’s working principle is based on the MOSFET action. A MOSFET is a semiconductor device which consists of metal semiconductor field effect transistor (MESFET). The gate voltage of the MESFET determines the current flowing through the drain and source. The gate voltage is dependent on the applied input power, and this input power determines the electrical characteristics of the AOB418L.
To control the current flow, voltage is applied to the gate terminal of the AOB418L. When the input voltage is applied, the gate voltage rises and this increases the rate of current flow through the device. As the input voltage increases, the current through the device also increases. In contrast, when the input voltage is reduced, the current flow through the device is also reduced.
In addition, the AOB418L is also capable of providing positive protection against reverse-bias conditions. This means that in case of reverse bias voltages, the AOB418L can withstand the higher voltage and prevent any leakages.
The AOB418L can also be used as a switch. This is because the AOB418L has a very low on-state resistance, which makes it ideal for high-current applications. This is especially useful when the switching time is very short, as the low input power requirements and the low on-state resistance of the AOB418L eliminates any excess current consumption.
In conclusion, the AOB418L is a single MOSFET that is used in applications requiring high input power, high current levels and low on-state resistance. It provides positive protection against reverse bias conditions, and it can also be used as a switch. Therefore, the AOB418L is a versatile and efficient power device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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