| Allicdata Part #: | 785-1262-2-ND |
| Manufacturer Part#: |
AOB4S60L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 4A D2PAK |
| More Detail: | N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-2... |
| DataSheet: |  AOB4S60L Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D²Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 263pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AOB4S60L Application Field and Working Principle
AOB4S60L is a four-pin single-channel enhancement-type vertical MOS field-effect transistor (vertical-MOSFET) manufactured by ZhiYi Technology. The board is composed of a power MOSFET, a zener diode, and a resistor. It is an integrated circuit intended for use in power switching, pulse power, and current-carrying applications.
The AOB4S60L can be used to drive a variety of DC loads, including solenoids, motors and lamps. It is also suitable for use in a wide variety of power control applications such as AC adapters, power supplies, motor controllers and solar inverters. It can also be used as a switching element in signal transmission and conditioning circuits in telecommunications, automotive and computer systems.
CTA-above
Working Principle
The AOB4S60L operates based on a gate-source voltage of 2 volts and gate-drain voltage of 4 volts. When a positive gate-source voltage is applied, it will open a channel of current between the source and the drain and permit current to flow. As the voltage between the gate and drain increases, the resistance of the channel reduces, and more current can then flow through it. The current carried by the transistor can be controlled by adjusting the gate-source voltage.
The AOB4S60L is a vertical-MOSFET designed for low power operation, offering high current control efficiency. It also offers excellent voltage regulation, with low on-state output impedance. Additionally, it is designed with a special zener diode, which helps to protect the device from electrostatic discharge.
Conclusion
In summary, the AOB4S60L is a four-pin single-channel enhancement-type vertical MOS field-effect transistor designed for use in power switching, pulse power, and current-carrying applications. With its high current control efficiency, low on-state output impedance and excellent voltage regulation, the AOB4S60L is an ideal choice for a variety of power control applications. Additionally, its special zener diode provides protection against electrostatic discharge.
The specific data is subject to PDF, and the above content is for reference
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