AON6912A Allicdata Electronics
Allicdata Part #:

AON6912A-ND

Manufacturer Part#:

AON6912A

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 10A/13.8A 8DFN
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 13...
DataSheet: AON6912A datasheetAON6912A Datasheet/PDF
Quantity: 1000
3000 +: $ 0.26778
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 13.8A
Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Power - Max: 1.9W, 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Description

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AON6912A is a new type of array device developed by Advanced Semiconductor, Inc., specifically for use in various linear, high-frequency, high frequency and high-density applications. It is a low-power, low-voltage, integrated n-channel MOSFET array with built-in protection circuitry. This transistor array can be used to provide several benefits to the design of power conversion systems, such as high-efficiency, low-loss, high-density and fast-switching capability. It can also be used to reduce overall power consumption, reduce system size and cost, optimize the efficiency and transient performance of the system, improve operating reliability and expand the application potential of the system.This MOSFET array device is composed of two different types of MOSFETs integrated together. The first type is the normal channel MOSFETs and the second type is the PROTECTER MOSFETs. Each type of MOSFET has a different function in the operation of the array device. The normal channel MOSFETs are used as the power switching devices in the system while the PROTECTER MOSFETs are utilized as the protection devices to limit the power dissipation and to prevent overvoltage or short circuit conditions.The AON6912A is designed to have low on-resistance and low gate capacitance, making it ideal for power conversion applications. The array device also has a built-in thermal shutdown feature to protect it from over-temperature conditions. Furthermore, the structure of the device is optimized for high speed switching and operation.The AON6912A can be used in many different applications and configurations. It can be used in boost converters, buck converters, CUK converters and other applicationsthat require electrical energy conversion. It can also be used to design wireless power systems, low-noise amplifiers, and radiofrequency integrated circuits.In addition to its applications, the AON6912A also has many features that make it advantageous in comparison to other MOSFET arrays. First, the array device is rated for up to 14V maximum voltage, making it ideal for higher voltage applications. Other features include a high current capability, low loss and gate charge, low gate output capacitance and fast switching speed.The working principle of the AON6912A is quite simple. The normal channel MOSFETs are used as the main power switches and the PROTECTER MOSFETs are used as the protection devices. When the normal channel MOSFETs are turned on, the positive current flows from the source to the drain and the PROTECTER MOSFETs turn on and begin to limit the current in order to prevent overvoltage or short circuit conditions. At the same time, the normal channel MOSFETs will switch from on to off in order to maximize power conversion efficiency.The AON6912A is an integral part of many applications where high-efficiency and fast-switching power conversion is needed. Its features, applications, and working principle make it a versatile and reliable element in power conversion designs. It can easily be integrated into the system, making it a great addition to any power conversion system.

The specific data is subject to PDF, and the above content is for reference

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