| Allicdata Part #: | AON6572-ND |
| Manufacturer Part#: |
AON6572 |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH |
| More Detail: | N-Channel 30V 36A (Ta), 85A (Tc) 6.2W (Ta), 48W (T... |
| DataSheet: | AON6572 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.18400 |
| 10 +: | $ 0.17848 |
| 100 +: | $ 0.17480 |
| 1000 +: | $ 0.17112 |
| 10000 +: | $ 0.16560 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.2W (Ta), 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON6572 is a high-performance n-channel enhancement-mode Field-Effect Transistor (FET) optimized for power management applications. AON6572 has superior electrical characteristics, including low on-resistance, low gate charge and excellent intermodulation performance. Its small size allows for higher power density applications. It is also suitable for high reliability applications.
Applications of AON6572
AON6572 is designed to provide superior performance and superior reliability in a wide variety of applications, including:
- Data transfers
- Photoelectric switches
- Motion control
- Power switching in high current and high voltage circuits
- High temperature and high humidity environments
Working Principle and Features of AON6572
AON6572 is an n-channel enhancement-mode FET, which works on the principle that the current passing through the device is proportional to the applied gate voltage. The device can provide high-speed switching due to its low on-resistance and high input capacitance. It also offers low gate charge, low total gate charge, fast switching time, and low power dissipation. In addition, it has excellent intermodulation performance, which is important for high-quality data transmission applications.
AON6572 offers superior reliability, with high temperature and high humidity operation. It also features a wide range of dynamic safe operating area (dSOA) characteristics, ensuring reliable operation under a wide range of operating conditions. In addition, the device offers low RDS(ON) values and low gate charge, which allow for more efficient power management systems.
Conclusion
AON6572 is a high-performance n-channel enhancement-mode FET, optimized for power management applications. It offers superior electrical characteristics, superior reliability and superior thermal characteristics. It has excellent intermodulation performance and wide range of dynamic safe operating area (dSOA) characteristics, which make it suitable for high reliability applications. It is suitable for a wide variety of applications, such as data transfers, photoelectric switches, motion control, power switching and high temperature and high humidity environments.
The specific data is subject to PDF, and the above content is for reference
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AON6572 Datasheet/PDF