AON6248

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AON6248 is a single N-Channel Advanced Oxide Trench MOSFET series which is designed to optimize power savings and efficiency by minimizing the total RDS(ON) of the solution. It integrates high-voltage fet array and ESD (electrostatic discharge) protection circuitry, and its innovative substrate process provides low-Vce(sat) and RDS(ON) uniformity.

The advanced features and performance of AON6248 make it ideal for a wide range of applications, including DC-DC converters, Class-D amplifiers, consumer and automotive power supplies, battery-powered equipment, home appliances, consumer electronics, security devices and power management systems.

AON6248 devices are available in a small WLP (Wafer Level Packaging) package that provides an optimized solution size and low thermal resistance. The bottom-gate architecture of the device allows for larger die area to achieve low RDS(ON). AON6248 also offers advanced gate charge optimization, which consumption is lower than its predecessors.

As a common MOSFET, AON6248 operate according to the MOSFET working principle. The device consists of a source (S), a drain (D) and a gate (G). It is mainly composed of two kinds of semiconductor regions: a p region and an n region. The two regions are isolated by an insulator with a certain thickness. Applying an electric field to the gate electrode which is placed on the insulator can create a hole depletion layer and construction negative electric field between source and drain. Thus generating a conductive channel. Once the electric field is turned on, current can flow across the channel between source and drain.

Applying source voltage can further adjust channel conductance, control current flow and effectively adjust the channel between source and drain, achieving the purpose of amplification. This is the internal working mechanism of MOSFET AON6248.

In sum, AON6248 specifically provides ultra low RDS(ON) which is suitable for high frequency and power saving applications. Applying the latest strategy and process, this series of device is the ideal choice for electronic applications. The units are available in a WLP package which features small size, easy mounting anda very low thermal resistance. At the same time, it is built based on the MOSFET working principle.

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