AON6936 Allicdata Electronics
Allicdata Part #:

785-1500-2-ND

Manufacturer Part#:

AON6936

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 22A/40A 8DFN
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 22A, 40...
DataSheet: AON6936 datasheetAON6936 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 40A
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Description

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AON6936 is a new power NMOS array device that provides high current, low voltage bi-directional switching capability. This device is intended as a high-performance low power alternative to the traditional, discrete N-Channel MOSFETs. The device, when activated, provides a controlled switching of current in either direction, depending on the design of the circuit. AON6936 has an integrated MOSFET array with a number of different configurations and performance levels that are optimized for different power switching applications. These include interface circuits, cascode and current mirror designs, amongst others.

AON6936 is a high power, low voltage rated N-Channel MOSFET array device. The device has an array of different channel types, including N and P channel complementary designs, as well as low RDSON N-Channel MOSFETs. In addition, this device also features an integrated charge pump and internal temperature protection, which allows the device to operate in extreme temperature environments.

The AON6936 array device has a wide range of power supply voltages that can used to power the device. It can be powered from voltages as low as 3V and up to the VDD voltage supply. It also has an internal low side discharge drain circuit that can be used to decrease the turn-on and turn-off times of the device. In addition, the device has an integrated high-side switch circuit, with a wide range of current ratings, that can be used to further reduce the total turn-on time of the device.

The AON6936 is a unique device that provides a high performance and low power alternative to traditional power MOSFETs. It is well suited for use in interface circuits, current mirrors, and cascode designs, amongst others. It offers high current, low voltage switching capability, and its integrated protective features protect the device from accidental overvoltage, overcurrent, and over-temperature conditions.

AON6936 array devices are a versatile tool for power switching applications. They are designed to provide excellent performance, low power consumption and high reliability. Additionally, they can be used in a wide range of applications, from low power to high power systems. This makes them well suited for a variety of applications such as portable electronics, automotive and industrial applications.

In summary, AON6936 is a high power, low voltage rated N-Channel MOSFET array device. It is a versatile tool for power switching applications. It offers high current, low voltage switching capability and integrated protection features to prevent accidental overvoltage, over-current and over-temperature conditions. Additionally, its wide range of power supply voltages and current ratings make it ideal for a variety of different power switching applications.

The specific data is subject to PDF, and the above content is for reference

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