AON6144

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AON6144 Application Field and Working Principle

AON6144 is a monolithic single-gate enhancement type 60V AON (middle voltage level) MOSFET (metal-oxide-semiconductor field-effect transistor) which was developed and manufactured by Alpha & Omega Semiconductor Inc. This product is an upgrade of a previous version and has more robust features, such as wide VDS, low RDS (on), breakdown voltage and temperature coefficient.

The application fields of AON6144 include power management, electronic safety and low engineering power switches. It is suitable for designs of load switch and LDO (low dropout voltage regulator).

The AON6144 employs an enhancement-mode vertical N-channel MOSFET. It provides a low value of on-resistance (RDS(on)) and low voltage drop, combining with low gate charge, these features make it an ideal choice for power management applications. It offers excellent thermal diffusion and pulsed current performance, including Gdv/Id (diode forward voltage versus total drain current). Its superior RDS(on) enables designers to minimize power loss while generating less heat. The device is designed to operate from a +2.5V voltage source, and the maximum operating temperature is 155°C. The device can be easily integrated into systems for on/off control and power management, and it is suitable for high speed and low power applications. The working principle of AON6144 is also quite simple. The gate, drain and source of the MOSFET are responsible for controlling the output. The voltage applied to the gate is compared to a reference voltage (generated by an internal path) to determine whether the MOSFET is turned on or off. The voltage applied to the gate is the controlling factor in determining the resistance between the drain and the source. If the voltage applied to the gate is higher than the reference voltage, the MOSFET is turned on, and the resistance between drain and source is minimized. If the voltage applied to the gate is lower than the reference voltage, the MOSFET is turned off and the resistance between the drain and source is increased.

In conclusion, AON6144 is a robust MOSFET device with wide VDS, low RDS(on), breakdown voltage and temperature coefficient. It is suitable for power management, electronic safety and low engineering power switch designs, and its working principle is based on a comparison between an internal reference voltage and the voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference