Allicdata Part #: | 785-1578-2-ND |
Manufacturer Part#: |
AON6526 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 24A DFN5X6 |
More Detail: | N-Channel 30V 24A (Ta), 32A (Tc) 6W (Ta), 25W (Tc)... |
DataSheet: | AON6526 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1229pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 6W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON6526 is a high-performance Field Effect Transistor (FET) which is commonly referred to as an "acronym MOSFET" since it is so commonly used in various applications. It is a single-die, low-Vg nMOSFET which is optimized for analog and high frequency digital applications. The AON6526 is widely used in numerous fields, and it is a popular choice for applications where high-speed and high accuracy are desired.
The AON6526 is a three-terminal device consisting of a source, drain, and gate. The source is usually connected to the positive power supply and the drain is connected to the negative terminal or ground. The gate is connected to a control voltage which is adjustable for controlling the conduction of current. In other words, this control voltage is used to open and close the gap between the source and drain, hence allowing current to flow through the device.
The AON6526 is used in myriad applications, wherein its operating principle is utilized. The FET may typically be used in switching and power amplification circuits. In switching applications, the device acts like a switch, enabling or disabling the conduction of current through the source and drain terminals. In power amplifier applications, the FET is used to amplify voltage signals. It works by allowing current to flow when the input voltage is large enough to activate the gate and closing the gap with a lower voltage.
The AON6526 is also well-suited for RF applications where high-frequency amplification is desired. This is due to its high-frequency response and reduced gate threshold. Efficiency is also improved due to its low gate-drain capacitance and reduced gate charge. Moreover, power consumption is kept low due to its low-gate voltage and higher-drain current.
The AON6526 has several other features which make it an excellent device for a variety of different applications. It has a wide range of voltage ratings and its breakdown voltage limits are much higher than comparable devices. Furthermore, its switching speed is superb and the device can operate at frequencies up to 1GHz. Lastly, the device is immune to latch-up, meaning it will not overheat or fail due to an overload.
Overall, the AON6526 is an excellent choice for a wide range of applications since it is a low-Vg, analog/high-frequency digital nMOSFET. It is also an excellent choice for RF applications due to its high-frequency response, reduced gate threshold, and low gate-drain capacitance. Moreover, its immunity to latch-up, wide range of voltage ratings, and superb switching speed make it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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