AON6594 Allicdata Electronics
Allicdata Part #:

AON6594-ND

Manufacturer Part#:

AON6594

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH
More Detail: N-Channel 30V 22A (Ta), 35A (Tc) 5W (Ta), 39W (Tc)...
DataSheet: AON6594 datasheetAON6594 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AON6594 is an ultra-low-voltage (1.5-V to 5.5-V) power MOSFET integrated circuit (IC) designed for use in applications requiring low-voltage operation. The device is a typical power MOSFET that can be used for a variety of applications, such as battery-powered systems, cost-sensitive motor control, and analog and digital control. The power MOSFETs in the AON6594 are designed to provide superior performance in the range of 1.5-V to 5.5-V operating voltage. This device supports a wide range of applications while keeping power dissipation to a minimum.

The AON6594 consists of an array of four n-channel MOSFETs, which are connected in parallel and have an on-resistance of 0.7 Ω, a gate drive voltage of 1.5-V, and a gate capacitance of 0.1 pF. The four n-channel MOSFETs can be used to provide the desired voltage and current in applications requiring low operating voltages. The MOSFETs are optimized to provide superior performance even at low voltages and low duty cycles. This ensures that the AON6594 has a high switching efficiency and low power dissipation.

The working principle of the AON6594 is simple. When a gate voltage is applied, it creates an electric field between the gate and the source. This electric field then causes the electrons to be attracted from the source and onto the gate. As the gate voltage increases, more electrons are attracted from the source and onto the gate, allowing current to flow through the MOSFET. As the current increases, the electrical resistance of the channel decreases and the MOSFET turns on completely.

The AON6594 can be used in a variety of applications, such as charge pumps, adjustable power supplies, and DC-DC converters. It can also be used in motor control, analog and digital control, automotive, and general power supply applications. Furthermore, the device has a low threshold voltage and ESD protection, making it suitable for use in portable and handheld devices. The device is also extremely compact, making it easy to integrate into compact circuits.

In conclusion, the AON6594 is an ultra-low-voltage power MOSFET IC designed for use in applications requiring low-voltage operation. The device is a typical power MOSFET array consisting of four n-channel MOSFETs. The MOSFETs are capable of providing low on-resistance and low gate-drive voltage. The device supports a wide range of applications and has a high switching efficiency and low power dissipation. It is suitable for use in applications such as charge pumps, adjustable power supplies, and DC-DC converters, as well as in motor control, analog and digital control, automotive, and general power supply applications.

The specific data is subject to PDF, and the above content is for reference

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