AON6934A Allicdata Electronics
Allicdata Part #:

AON6934A-ND

Manufacturer Part#:

AON6934A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 22A/30A 8DFN
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 22A, 30...
DataSheet: AON6934A datasheetAON6934A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 30A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Description

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The AON6934A is a market-leading semiconductor array device which is made up of four N-channel (38 mOhm) MOSFETs. It is a perfect solution for high-speed switching applications in multiple operating conditions across various fields of industry. This article will discuss AON6934A application field and working principle.

Application Field

The AON6934A is used in a wide range of applications such as:

  • Gate drives for high-current IGBTs and MOSFETs
  • DC-DC power converters
  • Current amplifier stages
  • High voltage switching applications
  • Battery management
  • Automotive applications
  • Industrial and communication systems
  • Robotics, communications, audio and digital electronics

As the AON6934A has low on-state resistance, high current carrying capacity and low gate charge, it is a perfect candidate for high-frequency and high-power switching applications.

Working Principle

The AON6934A consists of four N-Channel (38 mOhm) MOSFETs connected in parallel. The arrangement of MOSFETs is such that the off-state resistance is low, with unmatched gate-to-source voltage ratings up to 175 volts. The device operates on a single supply, while offering very low gate charge, making it ideal for high-speed switching applications.

The AON6934A works on the following principles:

  • When the gate voltage is lower than the threshold voltage, no voltage drops across the channel and the device is characterized as off-state.
  • When the gate voltage is increased more than the threshold voltage, a channel is formed between the drain and the source and the device is turned on.
  • The device can switch on and off quickly, making it suitable for high-frequency switching.

The high current density, low on-state resistance, low gate charge and low total power dissipation make the AON6934A a perfect solution for high-speed, highly efficient switching operations.

The AON6934A also offers a number of advantages such as low-input capacitance, lower gate leakage, low-threshold voltage and better temperature stability. These features make the device suitable for a wide range of temperature operating conditions.

In addition, the AON6934A is a cost-effective solution for medium and high power applications when compared to other MOSFETs. The device also has integrated under-voltage protection, making it safe to use in automotive and industrial applications.

The AON6934A is a market-leading semiconductor array device which is well-suited for a variety of applications. Its low on-state resistance, high current carrying capacity, and low gate charge make it suitable for high-frequency, high-power switching applications. In addition, it offers low-input capacitance, lower gate leakage, low-threshold voltage and better temperature stability, making it suitable for a wide range of temperature operating conditions. This makes it an ideal solution for medium to high power applications.

The specific data is subject to PDF, and the above content is for reference

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