Allicdata Part #: | AON6996-ND |
Manufacturer Part#: |
AON6996 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 30V 50A/60A DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 5... |
DataSheet: | AON6996 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26676 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 50A, 60A |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | 8-DFN-EP (5x6) |
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AON6996 is a transistor array featuring four 16-channel PEUT diodes. These diodes are designed for low-current and low-power applications and feature an extremely low on-resistance of 30 μΩ max. This makes them ideal for use in a wide range of applications. Furthermore, the AON6996 features a programmable output voltage (2V to 64V) and temperature compensation of -40°C to +125°C.
The AON6996 is an array of four 16-channel PEUT diodes, has a very low on-resistance of 30 μΩ max, and comes with a wide operating voltage range of 2V to 64V. It is ideal for use in a variety of low-power applications. The AON6996 is also temperature-compensated to prevent performance degradation at high temperatures.
AON6996 is an ideal solution for driving multiple light-emitting diodes (LEDs), as it is configured to ensure low-resistance and constant current through the LEDs. The device also works well as a switching regulator, providing stable and efficient voltage regulation. Additionally, the device allows for direct control of power MOSFETs, allowing for greater flexibility in circuit design.
The AON6996 uses a variety of transistor technologies for its operation. The most common transistor technology used is the metal-oxide semiconductor field-effect transistor (MOSFET). The MOSFET is a type of transistor which uses a gate control voltage to modulate the device’s output. This type of transistor is known for its low power consumption and high switching speed, allowing for efficient power management. Additionally, the AON6996 can use bipolar junction transistors (BJTs) as well as insulated metal-oxide gate field-effect transistors (IGFETs).
The AON6996 employs an internal gate driver, which monitors the power output of the device and modulates the gate voltage on the transistors. This allows for a more efficient and accurate voltage regulation, allowing for better power management. Additionally, the transistor array features an integrated gate driver circuit, allowing for simpler circuit design.
The AON6996 features a programmable output voltage and temperature compensation. This makes the device ideal for low-power applications that require precise voltage regulation. The device can be interconnected with other AON6996 devices to expand its voltage and temperature compensation range, allowing it to be used in even more applications. Additionally, the device comes in a variety of package styles, ranging from a single integrated circuit to a multi-chip module.
In conclusion, the AON6996 is an ideal solution for low-power and low-current applications, featuring a low on-resistance and programmable voltage. It uses a variety of transistor technologies, including MOSFETs and BJTs, to provide a high-efficiency power output. Additionally, the AON6996 features temperature compensation and a gate driver circuit to ensure accurate and efficient power management. It is available in a wide range of packages, making it perfect for many applications.
The specific data is subject to PDF, and the above content is for reference
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