| Allicdata Part #: | AON7812-ND |
| Manufacturer Part#: |
AON7812 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET 2N-CH 30V 6A |
| More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 6... |
| DataSheet: | AON7812 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) Asymmetrical |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 15V |
| Power - Max: | 4.1W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN-EP (3x3) |
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The AON7812 is a high-density array of power transistors built into a single package, making it an ideal solution for power switch and amplifier applications. It is designed to interface directly with low-voltage-centers micro. The AON7812 array includes 12 DMOS transistors, with each transistor composed of six FET-MOSFETs. This power transistor array is available in various gate tightly densities and 3.3, 5.0, 12, and 24V drain voltages that can be connected in various configurations in a single biased circuit. The AON7812 was designed to reduce component count, minimize power loss and system cost, increase current gain and reduce thermal resistance.
The AON7812’s main application fields are automotive, computer, communication, industrial, and consumer electronics. Additionally, due to its low-voltage biasing requirement, it can also be used in low-voltage circuitry. As a result, the AON7812 can be used in a wide range of electrical and electronics applications, such as PFCs, DC-DC converters, switching power supplies, serial regulation, and home appliances.
The AON7812 array’s working principle is as follows: Electrical current flows through six independent FET-MOSFETs aligned in each one of the transistors. At the center of the transistor is a gate which acts like a valve to control the current flow. Depending on the voltage applied to the gate, the FET-MOSFETs will either act as an open or closed switch. The AON7812 offers the designer a range of drain voltage configurations to choose from. When the voltage applied is above the threshold voltage, the FET-MOSFETs are turned on, thus allowing current to flow. When the voltage applied is below the threshold voltage, the FET-MOSFETs is turned off, thus blocking current from flowing. Additionally, the array also offers various temperature operating range and power dissipation configurations.
In conclusion, the AON7812 is a high-density, low-voltage power transistor array ideal for power switch and amplifier applications. It offers designers the ability to reduce component count, minimize power loss and system cost, increase current gain and reduce thermal resistance. It is used in a wide range of applications, such as PFCs, DC-DC converters, switching power supplies, serial regulation, and home appliances. Its working principle is based on its six FET-MOSFETs, which act as an open or closed switch depending on the voltage applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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AON7812 Datasheet/PDF