AON7410L

Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	660pF @ 15V
FET Feature:	--
Power Dissipation (Max):	1.7W (Ta), 20W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DFN-EP (3x3)
Package / Case:	8-PowerVDFN
Series:	--
Part Status:	Last Time Buy
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta), 20A (Tc)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AON7410L (also known as n-channel insulated gate field effect transistor) is a low-cost, low-voltage, low-power transistor for high-voltage and high-frequency switching applications. It has been developed for the semiconductor industry to provide a level of cost efficiency and performance that had previously been difficult to achieve. AON7410L has a single n-channel insulated gate that is suitable for both high-voltage and high-frequency switching applications.In its most basic form, an insulated gate field effect transistor (IGFET) consists of three major components: a gate, a source and a drain. The gate is an electrode that acts as a switch, controlling the flow of current through the other two components—the source and the drain. When voltage is applied to the gate, it creates a potential difference between the source and the drain, allowing current to flow. By applying a suitable voltage to the gate, the IGFET can be used to amplify and switch signals, making it an essential component of many electronic devices.AON7410L features a unique low-voltage IGFET construction in which the source and drain are isolated from the substrate by an insulated gate layer. This provides very efficient operation for both high voltage and high frequency applications. The insulated gate layer also prevents leakage of current from the substrate, allowing the transistor to operate at very high power levels without any risk of gate voltage drop or gate leakage. Additionally, the low-voltage construction of the AON7410L provides excellent transistor performance while keeping the cost at an affordable level.The AON7410L transistor is ideal for applications that require high-voltage and high-frequency operation, such as in automotive electronics, industrial automation systems, consumer electronics, and communication systems. It can be used to control DC motors, resistive loads, inductive loads, and various other switching applications. It is also suitable for use in switched-mode power supplies (SMPS) for switching power supply regulation and power factor correction. The transistor is also used in flash memory applications, used for storing large amounts of data.The AON7410L is also suitable for use in high-frequency switching applications, making it ideal for applications such as high-speed switching relays, switching converter circuits, and radio-frequency switches. It is also used in applications requiring fast switching, such as in frequency-modulated radio receivers and high-speed data communications. As an example, it can be used to control the power of multiplexers and demultiplexers used in wireless communications.Overall, the AON7410L is a versatile and cost effective transistor suitable for use in many different types of applications. Its low-voltage, low-power design make it particularly useful for power switch applications and high-frequency switching applications. The ability to control large amounts of current makes it ideal for a wide range of switching applications. For these reasons, the AON7410L is an excellent choice for today’s modern electronic systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description