Allicdata Part #: | AON7430L-ND |
Manufacturer Part#: |
AON7430L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 8DFN |
More Detail: | N-Channel 30V 9A (Ta), 20A (Tc) 1.7W (Ta), 25W (Tc... |
DataSheet: | AON7430L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.7W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3x3) |
Package / Case: | 8-PowerVDFN |
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The AON7430L, which stands for Advanced Oxide N-Channel 7430L is a power field-effect transistor (FET) that is manufactured by Taiwan Semiconductor. This device is an enhancement mode, N-Channel FET that is designed for use in high voltage and high current applications. The AON7430L has an easy to use, low-resistance On-State and this makes it highly suitable for low power and low switching losses. AON7430L is typically used in applications like switch mode power supplies (SMPS), such as power inverters and battery chargers, as well as in high-side and low-side drivers, and other power MOSFET type applications.
The AON7430L is a single-gate FET, which is also known as an insulated-gate bipolar transistor (IGBT). This type of transistor includes a p-type body layer, which is separated from a conducting substrate. This p-type layer insulates the gate control circuit from the rest of the structure, which is beneficial in terms of controlling irregularities in current flow and in reducing capacitance.
The device\'s gate input consists of an insulated gate contact and an isolated drain contact. The gate input requires a voltage signal, usually less than 5V, to turn the device on and off. The signal applied to the gate will control the device current flow and on-resistance. The AON7430L operates from 9V to 550V and can handle large current (up to 25A) with low on-resistance (as low as 270mΩ).
When the AON7430L is in its on-state, the potential difference between the gate and the source terminals is responsible for rapidly conducting a large current. This current is known as "leakage current" and it is created when electrons flow across the channel, thus changing their charge. It is this charge that allows the device to switch rapidly, resulting in fast switching operations.
Moreover, the AON7430L’s on-state resistance tradeoff between voltage and current is more efficient than that of other available FETs, making the device suitable for use in power conversion applications such as High-Voltage Switching, DC-DC Graphic Power ICs, RF Power Transmitter Drives, etc.
Finally, the AON7430L is equipped with a built-in temperature compensation system, which allows the device to automatically adjust its operating parameters based on changes in temperature. This feature further increases the device’s versatility and makes it an attractive choice for applications requiring reliable operation at wide temperature ranges.
The AON7430L is a unique device that combines a number of advantageous features, making it an ideal choice for a wide range of power conversion and high-voltage switching applications. The AON7430L’s easy to use, low-resistance On-State and its built-in temperature compensation system make it highly suitable for low power and low switching losses, thus providing a reliable solution for power MOSFET-type applications.
The specific data is subject to PDF, and the above content is for reference
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