Allicdata Part #: | 785-1234-2-ND |
Manufacturer Part#: |
AON7444 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V 33A 8DFN |
More Detail: | N-Channel 60V 9A (Ta), 33A (Tc) 3.1W (Ta), 42W (Tc... |
DataSheet: | AON7444 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SDMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerSMD, Flat Leads |
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The AON7444 is a 20V N-Channel array FET that has been specifically designed for frequency synthesizer applications. The FET array consists of eight separately addressable cells, each containing two npn-type FETs. The device is designed to operate as a low pass filter, allowing the user to select the desired frequency response characteristics. The AON7444 is available in a 16-lead TSSOP package and provides excellent performance at high frequency.
The AON7444 array FET offers a range of features and benefits that make it ideal for frequency synthesizer applications. It has a wide operating temperature range (from –40°C to +85°C) and low RDSON values. This means that it can operate efficiently for a wide range of frequencies, providing the user with a high level of control. Furthermore, the FET array has a very low output noise level, allowing it to be used in applications where noise levels must be kept to a minimum. Additionally, the device offers adjustable rise and fall times (between 3ns and 5ns). This helps to ensure that the desired frequency response characteristics are achieved.
The operating principles of the AON7444 FET array are relatively simple. Each cell consists of two npn-type transistors that are connected in series. When voltage is applied to the gate of the first transistor, the current will flow through it, and the second one will be open. Therefore, the voltage level at the drain of the second transistor will be determined by the gate voltage. This voltage will then control the current flowing through the drain of the first transistor, thereby allowing the user to adjust the frequency response characteristics.
The AON7444 FET array is an excellent choice for frequency synthesizer applications. Its wide operating temperature range, low RDSON values, low output noise level and adjustable rise and fall times make it an ideal solution for these types of applications. Furthermore, its simple operating principles make it easy to use and understand. Therefore, it is the perfect choice for use in frequency synthesizer applications.
The specific data is subject to PDF, and the above content is for reference
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