Allicdata Part #: | APT106N60B2C6-ND |
Manufacturer Part#: |
APT106N60B2C6 |
Price: | $ 14.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 106A TO-247 |
More Detail: | N-Channel 600V 106A (Tc) 833W (Tc) Through Hole T-... |
DataSheet: | APT106N60B2C6 Datasheet/PDF |
Quantity: | 92 |
1 +: | $ 12.76380 |
30 +: | $ 10.73200 |
120 +: | $ 9.86181 |
Vgs(th) (Max) @ Id: | 3.5V @ 3.4mA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | T-MAX™ [B2] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 833W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 308nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 53A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 106A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT106N60B2C6 is a high-efficiency, low-voltage Enhanced MOSFET designed to provide superior performance in a wide variety of applications. This MOSFET is constructed with a self-protected C-channel structure and is designed to have a low reverse gate-drain capacitance for improved performance. It is manufactured using high-quality silicon on an advanced process, making it suitable for high frequency, high power applications.
Application Field
The APT106N60B2C6 is suitable for a wide range of applications including audio amplifiers, motor drivers, power converters, power supplies, motors, and HVAC control circuits. It can also be used as a power switch in automotive applications or other systems that require high-efficiency operation. Additionally, the APT106N60B2C6 can be used as an automotive-grade driver or as a high-efficiency DC-DC converter.
This MOSFET offers several additional features that make it highly suitable for many applications. It can operate at a wide range of temperatures, including high thermal stress. Additionally, it offers a low input capacitance that provides improved noise immunity and improved control in switching applications. It also provides reduced switching losses and a low on-resistance for improved efficiency. Additionally, its high blocking voltage provides higher current capability and improved reliability.
Working Principle
The APT106N60B2C6 is a self-protected C-channel MOSFET that is designed to operate at relatively low voltages. When a positive voltage is applied to its gate, it switches on and allows current to flow between its source and drain. The amount of current that can flow between the source and drain is determined by the voltage at the gate and the design of the MOSFET. When the voltage applied to the gate is reduced, the MOSFET turns off and current no longer flows between the source and drain.
The APT106N60B2C6 also features a low gate-drain capacitance that allows it to operate at high frequencies with lower losses and improved noise immunity. This feature also allows the MOSFET to be used as a high-efficiency driver in applications that require fast switching speeds. Additionally, its low input capacitance reduces switching losses and improves control in switching applications.
The APT106N60B2C6 is a low voltage, self-protected C-channel MOSFET designed for a wide range of applications. It offers high-efficiency operation, low switching loss, and low input capacitance. It is suitable for audio amplifiers, motor drivers, power converters, power supplies, and HVAC control circuits. Additionally, its high blocking voltage ensures higher current capability for improved reliability and reduced power losses. The APT106N60B2C6 is an ideal choice for high-efficiency, low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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