Allicdata Part #: | APT10M07JVR-ND |
Manufacturer Part#: |
APT10M07JVR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V 225A ISOTOP |
More Detail: | N-Channel 100V 225A (Tc) 700W (Tc) Chassis Mount I... |
DataSheet: | APT10M07JVR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 1050nC @ 10V |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21600pF @ 25V |
Vgs (Max): | ±30V |
Series: | POWER MOS V® |
Vgs(th) (Max) @ Id: | 4V @ 5mA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 225A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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APT10M07JVR transistors are used for a wide range of applications. They are designed as a low-voltage, high-power Field Effect Transistor (FET). They are popular because they are able to handle a maximum current of 36A and are able to operate at 500V or higher. Additionally, they have a low on-state resistance, which allows them to draw very little power when not in use.
The APT10M07JVR transistors are specifically designed as N-channel enhancement-mode, which means they are specifically suited for switch mode applications. This is due to their high-speed switching capability. Furthermore, they also feature simplicity in design, making them easy to integrate into any existing or new design. For these reasons, APT10M07JVR transistors are commonly used in applications such as motor control, switching power supplies, inverters, and lighting.
The APT10M07JVR transistors are designed with a single channel which allows the control to be changed by changing the gate voltage. The gate voltage determines the on-state resistance of the device and thus controls the flow of current through it. The device also uses a depletion-mode design for the gate, which gives the transistor immunity from oscillating and false triggering. The channel is protected from reverse voltage by means of a built-in ESD clamp which can protect the device from up to 5.5V of gate-to-source voltage.
Inside the APT10M07JVR transistors are a number of different elements which work together to control the flow of current. The source contact is connected to the gate, which is held at a low voltage. This low voltage is called the threshold voltage and it is used to control the current in the device. The source is also connected to the drain, which draws a current through the device when the gate voltage is greater than the threshold voltage. The drain is also connected to the substrate, which acts as a second gate. The substrate voltage controls the characteristics of the device.
When the APT10M07JVR transistors are used in switching applications, the gate voltage is increased to turn the device on and decreased to turn the device off. When the device is on, the current will flow through it. When the device is off, the current will not flow and the device will not draw power. This process takes place quickly and efficiently, making the transistor ideal for a wide range of high-speed applications.
The APT10M07JVR transistors are widely used in many different applications due to their high-speed switching capability and low on-state resistance. Additionally, they have a very simple design, making them easy to incorporate into any existing or new designs. Therefore, APT10M07JVR transistors are popular for motor control, switching power supplies, inverters, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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