APT15F60B

Vgs(th) (Max) @ Id:	5V @ 500µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	290W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2882pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	72nC @ 10V
Series:	POWER MOS 8™
Rds On (Max) @ Id, Vgs:	430 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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APT15F60B is a low-threshold high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Diodes Incorporated that provides better switching performance and higher blocking voltage over a wide range of temperatures. The single N-channel MOSFET features an adjustable pre-bias source to optimize charge/discharge (FET) for high-speed operation. This device is capable of switching up to 65V and providing a low-on resistance of 15mΩ across a wide range of temperatures from -40°C to 150°C.The APT15F60B is suitable for many applications including power supplies, LED lighting, automotive electronics, and mobile devices. The low on-state resistances, high blocking voltage, and low threshold voltage of the APT15F60B combined with its adjustable pre-bias source make it an ideal choice for switching applications where very low power dissipation is needed. It is also compatible with lower voltage logic signals, making it suitable for device interface ports.The working principle of APT15F60B is based on spatial charge control. The MOSFET consists of 3 electrodes; source, drain, and gate. The source and drain electrodes are connected between two junctions, which act as an open switch for current flow when the MOSFET is on. A reverse bias is applied to the gate contact which allows electrons to flow from source to drain, thereby turning the switch on. By adjusting the gate bias voltage, the drain current can be controlled.The APT15F60B also features a unique adjustable pre-bias source, which enables the user to adjust the source voltage in order to optimize charge or discharge of the MOSFET’s gate for faster switching performance. This allows for faster switching of the device, reducing power dissipation and providing higher efficiency.The APT15F60B also has a relatively low threshold voltage, which helps reduce power dissipation when the MOSFET is on. The low voltage threshold is beneficial in switching applications that require low power dissipation and provides better device performance.In addition to its excellent performance, the APT15F60B is also resistant to latch-up and electrostatic discharge. This is due to its structure which makes it immune to latch-up failure and able to survive up to 2000V ESD, making it suitable for use in many sensitive applications.The APT15F60B is a reliable and cost-effective solution for switching and power conversion applications. Its adjustable pre-bias source, low on-state resistance, low power dissipation, and high blocking voltage make it an ideal choice for those applications in need of a high-performance MOSFET.

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