APT15F60S Allicdata Electronics
Allicdata Part #:

APT15F60S-ND

Manufacturer Part#:

APT15F60S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 16A D3PAK
More Detail: N-Channel 600V 16A (Tc) 290W (Tc) Surface Mount D3...
DataSheet: APT15F60S datasheetAPT15F60S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 500µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 430 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

The APT15F60S is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) power switch developed by the semiconductor company Advanced Power Technology (APT). It is a high voltage Schottky FET with a wide range of ratings and features which make it a cost-effective solution for many applications. This paper will provide an overview of the APT15F60S’s application and working principles.

Application

The APT15F60S is a dual N-channel power switch specifically designed for high current, high frequency applications such as in motor control and power supply systems. It is designed for low on-resistance and a high reliability, making it an ideal choice for those that require high-power, high-fidelity, and low-cost switching systems.This device can handle an operating voltage of up to 850V, meaning that it can be used in a wide variety of applications spanning from automotive, industrial and home appliances, to power management in telecom systems. Additionally, its high-frequency capability of up to 1MHz allows it to be used for high-speed switching applications, such as DC-DC power converters, as well as low-frequency applications.Moreover, this device features a low input voltage of 4.5V, making it a great solution for space-constrained designs. Additionally, its low power losses, tight on-resistance tolerances, and fast switching speeds make it suitable for high-efficiency applications, such as solar energy converters in which a low input voltage is essential.

Working Principle

The APT15F60S MOSFET is a type of field effect transistor that works by using a small electric field to control an electric current. It consists of three main components: the gate, the drain, and the source. The gate is a control electrode, which sets the voltage of the channel between the drain and the source. When a voltage is applied to the gate, it creates an electric field, which in turn creates a channel between the drain and the source. When the gate voltage is increased, the channel becomes wider and more current can pass through it.In the APT15F60S, the channel is made up of semiconductor material, which is exposed to the gate voltage. The gate voltage is the key parameter that dictates the device’s performance and determines its on-resistance, input and output capacitance, operating temperature range, and more. When the gate voltage is increased, the channel between the drain and the source becomes wider, allowing more current to pass through it.

Conclusion

The APT15F60S is a high-voltage Schottky FET, designed for a wide range of operations and high power applications. Thanks to its wide range of ratings, fast switching speed, low on-resistance, and low input voltage requirements, it is an ideal solution for power management applications in the automotive, industrial, and telecom systems industries. As a field effect transistor, the device works by using a small electric field to control current between the drain and the source, with the gate voltage being the main parameter that dictates the device’s performance.

The specific data is subject to PDF, and the above content is for reference

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