| Allicdata Part #: | APT35GP120B2DQ2G-ND |
| Manufacturer Part#: |
APT35GP120B2DQ2G |
| Price: | $ 15.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 1200V 96A 543W TMAX |
| More Detail: | IGBT PT 1200V 96A 543W Through Hole |
| DataSheet: |  APT35GP120B2DQ2G Datasheet/PDF |
| Quantity: | 16 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 13.67100 |
| 10 +: | $ 12.42860 |
| 25 +: | $ 11.49650 |
| 100 +: | $ 10.56420 |
| 250 +: | $ 9.63214 |
Specifications
| Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 35A |
| Package / Case: | TO-247-3 Variant |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 35A, 4.3 Ohm, 15V |
| Td (on/off) @ 25°C: | 16ns/95ns |
| Gate Charge: | 150nC |
| Input Type: | Standard |
| Switching Energy: | 750µJ (on), 680µJ (off) |
| Power - Max: | 543W |
| Series: | POWER MOS 7® |
| Current - Collector Pulsed (Icm): | 140A |
| Current - Collector (Ic) (Max): | 96A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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The APT35GP120B2DQ2G is a single IGBT transistor from Advanced Power Technology with a voltage rating of 1200V and a current rating of 35A. It is part of the APT35GP family of IGBTs which are designed for a wide range of uses including motor control, solar inverters and power conversion. The APT35GP120B2DQ2G is designed to handle high switching frequencies with very low losses and is ideal for applications that require power-saving designs.The APT35GP120B2DQ2G is a heterojunction bipolar transistor (HBT). It is composed of two back-to-back, bipolar transistors that are connected in series. This arrangement allows the device to reduce conduction losses while still providing high current carrying capacity. It is an insulated gate bipolar transistor (IGBT), which uses a dedicated insulated gate to control the conduction of current from the collector to the emitter. This gate is voltage-controlled and the voltage applied to the gate determines the conduction of current.The primary application of the APT35GP120B2DQ2G is motor control. The HBT structure of the IGBT reduces switching losses, enabling it to handle high switching frequencies with minimal losses. This makes it well-suited for controlling brushless DC motors, stepper motors and other types of motors with fast switching times. The device is also used in power converters and solar inverters, where its low conduction losses enable the efficient conversion of solar energy into electrical energy.The APT35GP120B2DQ2G can also be used in other applications such as DC/DC converters, induction heating and welding systems, and reset switches. It offers a number of benefits over other types of transistors, including high current capacity, low switching losses, and the ability to control a wide range of current levels. All of these features combine to make the device a versatile and efficient choice.In conclusion, the APT35GP120B2DQ2G is a single IGBT transistor from Advanced Power Technology with a voltage rating of 1200V and a current rating of 35A. It is designed for a wide range of uses, and its HBT structure enables it to reduce conduction losses while still providing high current carrying capacity. The primary application of the APT35GP120B2DQ2G is motor control, but it is also well-suited for use in power converters, solar inverters, and other applications.
The specific data is subject to PDF, and the above content is for reference
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