Allicdata Part #: | APT35GP120BG-ND |
Manufacturer Part#: |
APT35GP120BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 96A 543W TO247 |
More Detail: | IGBT PT 1200V 96A 543W Through Hole TO-247 [B] |
DataSheet: | APT35GP120BG Datasheet/PDF |
Quantity: | 20 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 543W |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 600V, 35A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 16ns/94ns |
Gate Charge: | 150nC |
Input Type: | Standard |
Switching Energy: | 750µJ (on), 680µJ (off) |
Series: | POWER MOS 7® |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 140A |
Current - Collector (Ic) (Max): | 96A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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A transistor is a semiconductor device used to amplify or switch electronic signals, serving as a three-terminal switch that can be used as a switch between two or more electrical networks or as an amplifier between two or more input signals. Transistors are classified into two main groups: Bipolar Transistors (BJTs) and Field Effect Transistors (FETs).
The APT35GP120BG is a single IGBT (Insulated Gate Bipolar Transistor), which is a three-terminal device that combines an N-channel FET, which acts as a switch, with a P-channel FET, which acts as a current amplifier, in a single package. It is designed for industrial motor speed control applications and is capable of providing a high level of efficiency. It also offers a wide range of features such as low on-resistance, fast switching, and low noise.
The APT35GP120BG is a monolithic integrated circuit consisting of a single-sector insulated gate bipolar transistor (IGBT) in a single package. It has a minimum on-resistance of 100 mΩ, a maximum gate voltage of 30 V, a maximum gate current of 7 mA, and a maximum voltage drive of 12 V. Its operating temperature range is between -40°C and 125°C. Its gate is compatible with CMOS and TTL logic levels.
The working of an APT35GP120BG-type IGBT is based on the principle of a thyristor or SCR (silicon-controlled rectifier). A thyristor is a four-layer semiconductor device in which the on and off states can be controlled by a gate current. The gate current creates a voltage across the gate and the channel of the device, which helps in controlling the flow of current. When the gate voltage is positive, it turns the device on by allowing the passage of conductive current between the collector and emitter. When the gate voltage is negative, it turns the device off.
The APT35GP120BG is used in a variety of industrial and ultra high-power motor speed control applications such as air conditioners, power tools, automotive power inverters, UPS systems, and propulsion motors. It is an ideal choice for energy-efficient applications, due to its low on-resistance and fast switching capabilities, thus reducing overall power consumption. Its high efficiency also makes it suitable for use in low-noise applications.
The APT35GP120BG is an ideal device for motor speed control applications due to its high current ratings, low on-resistance, and fast switching characteristics. It is designed to withstand harsh environmental conditions and its single-packaging makes it more efficient. Furthermore, its compatibility with CMOS and TTL logic levels makes it an ideal choice for use in low-noise applications.
The specific data is subject to PDF, and the above content is for reference
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