APT30GT60KRG Allicdata Electronics

APT30GT60KRG Discrete Semiconductor Products

Allicdata Part #:

APT30GT60KRG-ND

Manufacturer Part#:

APT30GT60KRG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 64A 250W TO220
More Detail: IGBT NPT 600V 64A 250W Through Hole TO-220 [K]
DataSheet: APT30GT60KRG datasheetAPT30GT60KRG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 250W
Supplier Device Package: TO-220 [K]
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: 12ns/225ns
Gate Charge: 145nC
Input Type: Standard
Switching Energy: 525µJ (on), 600µJ (off)
Series: Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Current - Collector Pulsed (Icm): 110A
Current - Collector (Ic) (Max): 64A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT30GT60KRG is a high-performance IGBT module designed to be used in the applications of motor controls, uninterruptible power supplies, and power conversion.

IGBTs are insulated-gate bipolar transistors that combine the high input-impedance of metal-oxide semiconductor field-effect transistors (MOSFETs) and the low switching-loss of bipolar junction transistors (BJTs). This particular IGBT module features a high-speed switching and soft-switching characteristics, allowing for higher frequency and efficiency.

This module has rated gate and collector voltages of 30V and 600V, respectively. Its collector-emitter voltage (VCE) is rated up to 600V and the maximum permissible current in continuous operation conditions is 30A. The APT30GT60KRG has very low on-state voltage, allowing for efficient switching and high power conversion.

The APT30GT60KRG has soft-decision switching capabilities that allow for soft-decision switching and dynamic control of power converters and motor control systems without producing noise or overshoot to the system. The device is also equipped with a built-in protection circuit capable of limiting overcurrent and overvoltage, allowing for extremely reliable operation with high current or voltage. Additionally, the module includes a logic-level input for controller signals that can be used to control the on/off state of the IGBT.

The APT30GT60KRG’s working principle is based on the field-effect transistor (FET) and bipolar junction transistor (BJT). It consists of a power semiconductor consisting of the IGBT and a control module which makes use of the logic-level input to control the on/off state of the IGBT. For the collector current of the IGBT to flow through the collector-emitter circuit, a voltage must first be applied to the gate-emitter. A small change in the gate-emitter voltage will trigger a large change in collector current. This is known as the “avalanche effect” of the IGBT, which allows the collector current to be switched at high speeds.

The APT30GT60KRG is suitable for applications such as electric drives, DC/DC converters, or SMPSes operating at high frequencies or temperatures. It is ideal for applications where a low on-state voltage, fast switching speed, and high-temperature operation are required. The module is ideal for use with high-power electronics, industrial drives, robotics, and other motion control applications.

Overall, the APT30GT60KRG is a highly efficient single insulated-gate bipolar transistor that provides excellent performance in switching speed and variable control. It has a wide range of uses in power electronics applications due to its low on-state voltage, fast switching speed, and reliable operation in high current and voltage applications.

The specific data is subject to PDF, and the above content is for reference

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