APT35GA90BD15

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The APT35GA90BD15 is a single IGBT device. It is a high-voltage, high-speed, and low-loss semiconductor device that has some unique characteristics, which makes it especially suitable for a range of applications.

This device is capable of handling blocking voltage up to 1700V, with its peak repetition blocking voltage rated at 1500V. The output current capability of this device is rated at 35A which makes it suitable for a broad range of applications. This device’s high-frequency operation and low noise also makes it suitable for a range of high-speed, high-performance applications in the fields of industrial and automotive markets.

Specifically, the device is suitable for switching applications in motor drives, intelligent power modules, general purpose inverters, AC regulators, UPS systems, and induction heating appliances. In the automotive field, it is usually used in electric control systems and powertrain applications.

The device is also capable of operation at switching frequencies up to 20 kHz or higher and can be mounted on both plastic and ceramic substrates. The APT35GA90BD15 has a built-in smart gate driving solution, which enables it to be used in an intelligent mode with a constant current source for gate driving. The total gate current is typically 3A, with a turn-on gate voltage of 8V and a turn-off gate voltage of 15V. The device also includes overvoltage protection and electromagnetic interference filtering capability.

The working principle of this device is based on the use of multiple insulated gates for switching, which means that the IGBT can be linear controlled with the use of a single-stage transistor. Unlike a traditional transistor, the IGBT can operate at much higher switching speeds compared to a regular bipolar junction transistor (BJT). This is because the device utilizes a negative temperature coefficient technology, which enables it to have fast switching speeds.

Additionally, the IGBT can offer greater efficiency than a BJT because it has lower conduction loss and greater control over the voltage. This is because the device utilizes a three layer pnpn structure that allows the current to be carried more efficiently. The IGBT can also withstand high voltage with its wide blocking voltage range, making it suitable for high voltage applications.

In summary, the APT35GA90BD15 single IGBT device is a high-voltage, high-speed, low-loss semiconductor that is suitable for a wide range of applications, such as motor drives, intelligent power modules, inverters, AC regulators, and electric control systems. It is capable of handling blocking voltage up to 1700V, and its peak repetition blocking voltage is rated at 1500V. The device is also capable of operation at switching frequencies up to 20 kHz or higher and can be mounted on both plastic and ceramic substrates. The working principle of this device is based on the use of multiple insulated gates for switching, and its negative temperature coefficient technology enables it to have fast switching speeds and greater efficiency than a regular bipolar junction transistor.

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