APT50GF120JRDQ3 Allicdata Electronics
Allicdata Part #:

APT50GF120JRDQ3-ND

Manufacturer Part#:

APT50GF120JRDQ3

Price: $ 46.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 120A 521W SOT227
More Detail: IGBT Module NPT Single 1200V 120A 521W Chassis Mou...
DataSheet: APT50GF120JRDQ3 datasheetAPT50GF120JRDQ3 Datasheet/PDF
Quantity: 4
1 +: $ 42.56280
10 +: $ 40.05730
25 +: $ 37.55350
100 +: $ 35.80110
Stock 4Can Ship Immediately
$ 46.82
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 120A
Power - Max: 521W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 5.32nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Description

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IGBT modules are devices that contain multiple insulated gate bipolar transistors (IGBTs) with associated protection circuitry and common heat sink. They are used in power electronic applications such as motor control, power conversion, and power switching. The APT50GF120JRDQ3 is a high voltage power module that is suitable for a wide range of hard switching and soft switching applications such as motor control, power conversion and power switching.

The APT50GF120JRDQ3 is designed in a modular format to provide a system level solution which is composed of advanced power components and protective circuits to integrate all of the required functions into a single device. This device can handle high currents up to 50A peak, making it suitable for high power applications. The device also has a maximum voltage rating of 1200V, making it suitable for applications that require high voltage power.

The APT50GF120JRDQ3 features a robust design that includes a wide range of integrated features to protect the device from overloads, shorts, overtemperature, and undervoltage. The device also has integrated overcurrent protection, reverse-current prevention, and a fault-signal output that can be used to monitor the status of the system.

The working principle of the APT50GF120JRDQ3 is based on the insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal power semiconductor device that combines the properties of a field-effect transistor (FET) with a bipolar transistor. The IGBT is able to operate in both the linear and switching modes, making it well-suited for applications such as motor control, power conversion and power switching.

The IGBT consists of an emitter, a base, and a collector. When a positive voltage is applied to the base terminal, the IGBT is turned on and the collector-emitter current passes from the collector to the emitter. When the voltage is removed, the IGBT is turned off and the current is blocked in both directions. The device has a high switching speed, making it suitable for applications that require fast switching times.

In the APT50GF120JRDQ3, the IGBT is embedded in an array of protective circuitry and integrated components in order to provide a system level solution. The protective circuitry ensures that the device is protected from overvoltage, short circuit, and overcurrent, while the integrated components provide superior thermal stability and improve efficiency. The integrated components also help to monitor the status of the system, allowing for safe and efficient operation.

The APT50GF120JRDQ3 is an ideal solution for a wide range of hard switching and soft switching applications such as motor control, power conversion, and power switching. The device has a high voltage rating of 1200V and a peak current rating of 50A, making it suitable for high power applications. The embedded IGBT provides fast switching speeds, while the integrated protective circuitry and components ensure safe and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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