Allicdata Part #: | APT56M50L-ND |
Manufacturer Part#: |
APT56M50L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 56A TO-264 |
More Detail: | N-Channel 500V 56A (Tc) 780W (Tc) Through Hole TO-... |
DataSheet: | APT56M50L Datasheet/PDF |
Quantity: | 49 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT56M50L is an advanced field effect transistor (FET), more accurately described as a BCD MOSFET, which is composed of a monolithic chip mounted onto a package. It is a single-channel device, commonly used for circuit switching, design complexity reduction, and signal switching in a variety of electronic devices. This article will discuss the application field and working principle of the APT56M50L.
Application Fields
The APT56M50L can be applied in myriad electronic designs due to its flexibility and performance. It is mainly used in circuit switching applications. Furthermore, it can be utilized in voltage regulator modules, dynamic logic circuits, and level detectors. The monolithic chip allows for simplicity in building bridges, as well as eliminating the need for external components such as resistor networks. It is also capable of handling high current throughput, up to 50 A.
Features and Working Principle
The APT56M50L operates in a 25 V/100V operating mode, meaning that it can switch between 25 V and 100 V. It has a drain-source on resistance of 56 mΩ, a current limit of 71 A, and a gate-source breakdown voltage of 56 V. It is capable of withstanding temperatures ranging from -55⁰C to 160⁰C. The APT56M50L can also apply a gate voltage of 5V.
The working principle of the APT56M50L involves a metal-oxide-semiconductor field effect (MOSFET) between the source and drain. When a voltage is applied to the transistor’s gate, an electric field is created. This field is impaired by the layer of metal oxide between the metal gate and channel, allowing for the controlled flow of electrons from the source to the drain. This field effect induces current in the crystal lattice of the transistor, allowing it to be used for circuit switching.
Conclusion
The APT56M50L is an advanced field effect transistor (FET) which can be used to switch circuits, reduce design complexity, switch signals, build bridges, and handle high current throughput. It operates in a 25V/100V mode, has a drain-source on resistance of 56 mΩ, and can withstand temperatures ranging from -55⁰C to 160⁰C. This advanced technology makes the APT56M50L a flexible and reliable choice for circuit switching applications and other designs.
The specific data is subject to PDF, and the above content is for reference
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