APT53N60SC6

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APT53N60SC6 is a N-Channel Enhancement Mode MOSFET designed using advanced trench technology which can provide excellent RDS(ON) performance. This product is suitable for applications such as motor control, photoelectric control, lighting control and consumer electronics.

Key Features

• Logic Level Gate Drive
• Fast Switching Speed
• Low Rdson
• Low Threshold
• Pb Free Packages are Available

Overview of APT53N60SC6

APT53N60SC6 is a N-channel MOSFET available in SOT-223, TO-220 and DPAK packages. It has a breakdown voltage of 650V and a drain current rating of 5A. It exhibits a low Rdson of less than 0.003 Ohms and can quickly switch at high frequency. The Gate threshold voltage is 8V and the Gate-source voltage is 20V. This product is RoHS Compliant.

Application Fields of APT53N60SC6

APT53N60SC6 can be used in various applications such as motor control, lighting control, photoelectric control and consumer electronics. It is well suited for a wide range of consumer, commercial and industrial applications.

It can be used in consumer electronics such as DVD and DVD-ROM players, set-top boxes and digital TVs. This MOSFET can also be used in lighting control applications such as dimmer switches, lighting ballasts and outdoor lighting. It is also suitable for motor control applications such as DC motors, AC motors and brushed motors. In addition, it can be used in photoelectric control applications such as solar panels, light sensors and photocells.

Working Principle of APT53N60SC6

APT53N60SC6 is an enhancement mode MOSFET, which means it is in the off position (RDS(ON) is very high) when the Gate-source voltage is below the threshold voltage. When the Gate-source voltage is more than the threshold voltage, the MOSFET will be turned on and the RDS(ON) will be decreased.

When a voltage is applied to Gate-source of the MOSFET, electrons will flow from the source to the Gate region and form an inversion layer in the channel. This inversion layer increases the conductivity between the source and drain of the MOSFET and the RDS(ON) of the MOSFET decreases.

As the Gate voltage increases, the width of the inversion layer increases, resulting in greater current through the MOSFET. When the Gate-source voltage is more than the threshold voltage, the MOSFET will be fully turned on and the RDS(ON) will be at its lowest.

Conclusion

APT53N60SC6 is a N-Channel Enhancement Mode MOSFET which is suitable for applications such as motor control, lighting control, photoelectric control and consumer electronics. It has a very low Rdson of 0.003 Ohms and can quickly switch at a high frequency. The Gate threshold voltage is 8V and the Gate-source voltage is 20V. This MOSFET is RoHS Compliant.

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