APT50GP60BG Allicdata Electronics
Allicdata Part #:

APT50GP60BG-ND

Manufacturer Part#:

APT50GP60BG

Price: $ 8.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 100A 625W TO247
More Detail: IGBT PT 600V 100A 625W Through Hole TO-247 [B]
DataSheet: APT50GP60BG datasheetAPT50GP60BG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
60 +: $ 8.03866
Stock 1000Can Ship Immediately
$ 8.85
Specifications
Power - Max: 625W
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C: 19ns/83ns
Gate Charge: 165nC
Input Type: Standard
Switching Energy: 465µJ (on), 637µJ (off)
Series: POWER MOS 7®
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Pulsed (Icm): 190A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT50GP60BG is a one of three types of Insulated Gate Bipolar Transistor (IGBTs). IGBTs are a type of transistor used in electronics, and are commonly used to control power levels for various applications. The APT50GP60BG is typically used for applications such as switching in high-power DC/DC converters, and for motor control applications.

The APT50GP60BG is a single-die IGBT with a maximum on-state voltage of 600V and rated output power of 40W. It has an input current of 20A and a maximum switching frequency of 100kHz. The chip is composed of a symmetrical silicon heat-sink, a gate oxide layer, an NPN junction fence, and a flip-chip bonding structure. The design of the chip allows it to operate at high temperatures and is also capable of high-current and high-gain operation.

The APT50GP60BG works by allowing a certain amount of electrical current to flow through it. This is achieved by controlling the amount of current flowing through the gate oxide layer and the NPN junction fence. Depending on the type of application, various amounts of current can be supplied to the IGBT. This allows for the precise control of power levels for applications such as DC/DC converters, motor control applications, and variable speed drives.

In addition to its high-power output capabilities, the APT50GP60BG has several other features that make it a desirable choice for power switching applications. Some of these features include an integrated NPN gate driver, an over-voltage protection circuit, and a minimum on-resistance of 0.4mΩ. These features make the APT50GP60BG suitable for high-power applications and reduce the risk of damage to the chip due to over-voltage or excessive current.

The APT50GP60BG is a powerful single-die IGBT that provides superior power switching performance in a wide range of applications. It has a high on-state voltage and rated output power, and its integrated NPN gate driver and over-voltage protection circuit ensure safe and reliable operation. The chip is designed to provide reliable and high-performance operation in a variety of power switching applications.

The specific data is subject to PDF, and the above content is for reference

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