APT50GT120LRDQ2G Discrete Semiconductor Products

Power - Max:	694W
Supplier Device Package:	TO-264 [L]
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	800V, 50A, 1 Ohm, 15V
Td (on/off) @ 25°C:	23ns/215ns
Gate Charge:	240nC
Input Type:	Standard
Switching Energy:	2585µJ (on), 1910µJ (off)
Series:	Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic:	3.7V @ 15V, 50A
Current - Collector Pulsed (Icm):	150A
Current - Collector (Ic) (Max):	106A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction:

The APT50GT120LRDQ2G is a high power and low on-state resistance IGBT module designed for the applications, such as power conversion, motor control and industrial automation. It features excellent power performance, low inductance packaging and reliable thermal characteristics.

Applications:

The APT50GT120LRDQ2G is developed for the applications requiring high power, such as motor control, power conversion, automation and many other industrial applications. It is suitable for use in high-power applications, with low on-state resistance, high voltage ratings and low switching speed. In addition, it is highly reliable and easy to assemble.

Working Principle:

The APT50GT120LRDQ2G IGBT module is designed as an insulated gate-bipolar transistor (IGBT). It is composed of two power transistors, one built on top of the other, with a shared gate being the input signal and the output signal. The lower transistor normally has the gate connected to the collector, and the upper one to the emitter. When a positive bias is applied to the gate, the collector and the emitter are now both connected together, allowing a current to flow from the collector to the emitter. In addition, the APT50GT120LRDQ2G IGBT module is protected independently thanks to the N-channel IGBT above and the P-channel IGBT below. This protection scheme gives maximum reliability of the IGBT module.

Conclusion:

The APT50GT120LRDQ2G is an IGBT module designed for high-power applications. It has low on-state resistance combined with high voltage ratings, and is suitable for motor control, power conversion and industrial automation. It is protected by two IGBTs, one P-channel and one N-channel, for maximum reliability.

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