Allicdata Part #: | APT50GP60B2DQ2G-ND |
Manufacturer Part#: |
APT50GP60B2DQ2G |
Price: | $ 9.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 150A 625W TMAX |
More Detail: | IGBT PT 600V 150A 625W Through Hole |
DataSheet: | APT50GP60B2DQ2G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
60 +: | $ 9.02489 |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 50A |
Package / Case: | TO-247-3 Variant |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 50A, 4.3 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/85ns |
Gate Charge: | 165nC |
Input Type: | Standard |
Switching Energy: | 465µJ (on), 635µJ (off) |
Power - Max: | 625W |
Series: | POWER MOS 7® |
Current - Collector Pulsed (Icm): | 190A |
Current - Collector (Ic) (Max): | 150A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APT50GP60B2DQ2G Application Field and Working Principle
A power transistor is a semiconductor device used to control or switch electrical circuits. This device is most commonly used in applications that require high-power amplification. APT50GP60B2DQ2G is a power transistor belongs to the family of IGBTs (Insulated Gate Bipolar Transistor) - Single. This power transistor is used for a variety of power management applications in electronic circuits.
Application Field
APT50GP60B2DQ2G is ideal for applications in motor control, light sources, power converters, and inverters. Its maximum power rating is 50A, which makes it suitable for powering high-power applications. This power transistor offers high speed switching, high output power, low conduction losses, and low switching losses. It is also used in applications such as power supplies, automotive systems, inverters, uninterrupted power supply (UPS) systems, and power conversion systems.
Working Principle
The APT50GP60B2DQ2G power transistor is based on the IGPT (Insulated Gate Bipolar Transistor) technology. This advanced semiconductor technology combines the best characteristics of BJTs (Bipolar Junction Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The IGBT has three terminals: the gate, the collector, and the emitter. The gate terminal is used for controlling the flow of current between the collector and the emitter by applying a voltage to the gate. This voltage allows a current to flow from the collector to the emitter when the gate is open. When the gate is closed, the current stops flowing. Because of the insulated gate, the voltage drop between the collector and the emitter is extremely low, resulting in higher efficiency.
Features
The features offered by the APT50GP60B2DQ2G power transistor are high performance, improved reliability, and high-speed switching characteristics. It also offers a wide operating temperature, extended operational life, and enhanced passivated surface. It is also a cost-effective solution for high-power applications and is suitable for use in a wide range of products such as automotive and power management.
Conclusion
The APT50GP60B2DQ2G power transistor is an ideal choice for powering high-power applications such as motor control, light sources, power converters, and inverters. Its high-speed switching and low conduction and switching losses provide an economical and reliable solution for a variety of applications. With enhanced passivated surfaces and a wide range of operating temperatures, the APT50GP60B2DQ2G is a cost-effective and reliable solution for power applications that require high performance, reliability, and speed.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT50GN60BG | Microsemi Co... | 3.65 $ | 1000 | IGBT 600V 107A 366W TO247... |
APT54GA60B | Microsemi Co... | 4.59 $ | 1000 | IGBT 600V 96A 416W TO-247... |
APT50GS60BRG | Microsemi Co... | 5.22 $ | 1000 | IGBT 600V 93A 415W TO247I... |
APT54GA60BD30 | Microsemi Co... | 5.54 $ | 1000 | IGBT 600V 96A 416W TO247I... |
APT50GR120L | Microsemi Co... | 6.87 $ | 1000 | IGBT 1200V 117A 694W TO26... |
APT50GS60BRDLG | Microsemi Co... | 7.0 $ | 1000 | IGBT 600V 93A 415W TO247I... |
APT50GP60BG | Microsemi Co... | 8.85 $ | 1000 | IGBT 600V 100A 625W TO247... |
APT50GP60B2DQ2G | Microsemi Co... | 9.93 $ | 1000 | IGBT 600V 150A 625W TMAXI... |
APT50GT120B2RDQ2G | Microsemi Co... | 11.03 $ | 1000 | IGBT 1200V 94A 625W TO247... |
APT50GT120LRDQ2G | Microsemi Co... | 11.85 $ | 1000 | IGBT 1200V 106A 694W TO26... |
APT50GF120B2RG | Microsemi Co... | 13.15 $ | 1000 | IGBT 1200V 135A 781W TMAX... |
APT50GT120B2RDLG | Microsemi Co... | 13.8 $ | 8 | IGBT 1200V 106A 694W TO-2... |
APT50GT60BRDQ2G | Microsemi Co... | -- | 119 | IGBT 600V 110A 446W TO247... |
APT50GN60BDQ2G | Microsemi Co... | -- | 113 | IGBT 600V 107A 366W TO247... |
APT50GT120B2RG | Microsemi Co... | 12.08 $ | 294 | IGBT 1200V 94A 625W TO247... |
APT50GN120L2DQ2G | Microsemi Co... | 13.2 $ | 82 | IGBT 1200V 134A 543W TO26... |
APT50GT60BRG | Microsemi Co... | -- | 53 | IGBT 600V 110A 446W TO247... |
APT50GF120LRG | Microsemi Co... | -- | 98 | IGBT 1200V 135A 781W TO26... |
APT50GS60BRDQ2G | Microsemi Co... | -- | 1000 | IGBT 600V 93A 415W TO247I... |
APT50GN120B2G | Microsemi Co... | 8.22 $ | 19 | IGBT 1200V 134A 543W TO-2... |
APT50GR120B2 | Microsemi Co... | 8.41 $ | 8 | IGBT 1200V 117A 694W TO24... |
APT50N60JCU2 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 52A SOT-... |
APT56F50B2 | Microsemi Co... | 11.27 $ | 41 | MOSFET N-CH 500V 56A TO-2... |
APT5010LFLLG | Microsemi Co... | 14.71 $ | 30 | MOSFET N-CH 500V 46A TO-2... |
APT53F80J | Microsemi Co... | 45.7 $ | 41 | MOSFET N-CH 800V 57A SOT-... |
APT50M38JLL | Microsemi Co... | 50.21 $ | 53 | MOSFET N-CH 500V 88A SOT-... |
APT53N60BC6 | Microsemi Co... | -- | 47 | MOSFET N-CH 600V 53A TO-2... |
APT56M50L | Microsemi Co... | -- | 49 | MOSFET N-CH 500V 56A TO-2... |
APT5010JLLU2 | Microsemi Co... | 22.92 $ | 73 | MOSFET N-CH 500V 41A SOT-... |
APT5014SLLG/TR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 35A TO-2... |
APT58M50JCU3 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 58A SOT2... |
APT53N60SC6 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 53A D3PA... |
APT56F60B2 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 60A TO-2... |
APT58F50J | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
APT50M65JLL | Microsemi Co... | 31.41 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
APT58M80J | Microsemi Co... | 37.49 $ | 1000 | MOSFET N-CH 800V 58A SOT-... |
APT5010B2FLLG | Microsemi Co... | 14.7 $ | 24 | MOSFET N-CH 500V 46A T-MA... |
APT51F50J | Microsemi Co... | -- | 4 | MOSFET N-CH 500V 51A SOT-... |
APT58M50JU2 | Microsemi Co... | 15.86 $ | 1000 | MOSFET N-CH 500V 58A SOT2... |
APT58M50JU3 | Microsemi Co... | 16.65 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT