APT50GP60B2DQ2G Allicdata Electronics
Allicdata Part #:

APT50GP60B2DQ2G-ND

Manufacturer Part#:

APT50GP60B2DQ2G

Price: $ 9.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 150A 625W TMAX
More Detail: IGBT PT 600V 150A 625W Through Hole
DataSheet: APT50GP60B2DQ2G datasheetAPT50GP60B2DQ2G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
60 +: $ 9.02489
Stock 1000Can Ship Immediately
$ 9.93
Specifications
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 50A, 4.3 Ohm, 15V
Td (on/off) @ 25°C: 19ns/85ns
Gate Charge: 165nC
Input Type: Standard
Switching Energy: 465µJ (on), 635µJ (off)
Power - Max: 625W
Series: POWER MOS 7®
Current - Collector Pulsed (Icm): 190A
Current - Collector (Ic) (Max): 150A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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APT50GP60B2DQ2G Application Field and Working Principle

A power transistor is a semiconductor device used to control or switch electrical circuits. This device is most commonly used in applications that require high-power amplification. APT50GP60B2DQ2G is a power transistor belongs to the family of IGBTs (Insulated Gate Bipolar Transistor) - Single. This power transistor is used for a variety of power management applications in electronic circuits.

Application Field

APT50GP60B2DQ2G is ideal for applications in motor control, light sources, power converters, and inverters. Its maximum power rating is 50A, which makes it suitable for powering high-power applications. This power transistor offers high speed switching, high output power, low conduction losses, and low switching losses. It is also used in applications such as power supplies, automotive systems, inverters, uninterrupted power supply (UPS) systems, and power conversion systems.

Working Principle

The APT50GP60B2DQ2G power transistor is based on the IGPT (Insulated Gate Bipolar Transistor) technology. This advanced semiconductor technology combines the best characteristics of BJTs (Bipolar Junction Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The IGBT has three terminals: the gate, the collector, and the emitter. The gate terminal is used for controlling the flow of current between the collector and the emitter by applying a voltage to the gate. This voltage allows a current to flow from the collector to the emitter when the gate is open. When the gate is closed, the current stops flowing. Because of the insulated gate, the voltage drop between the collector and the emitter is extremely low, resulting in higher efficiency.

Features

The features offered by the APT50GP60B2DQ2G power transistor are high performance, improved reliability, and high-speed switching characteristics. It also offers a wide operating temperature, extended operational life, and enhanced passivated surface. It is also a cost-effective solution for high-power applications and is suitable for use in a wide range of products such as automotive and power management.

Conclusion

The APT50GP60B2DQ2G power transistor is an ideal choice for powering high-power applications such as motor control, light sources, power converters, and inverters. Its high-speed switching and low conduction and switching losses provide an economical and reliable solution for a variety of applications. With enhanced passivated surfaces and a wide range of operating temperatures, the APT50GP60B2DQ2G is a cost-effective and reliable solution for power applications that require high performance, reliability, and speed.

The specific data is subject to PDF, and the above content is for reference

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