Allicdata Part #: | APT50N60JCU2-ND |
Manufacturer Part#: |
APT50N60JCU2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 52A SOT-227 |
More Detail: | N-Channel 600V 52A (Tc) 290W (Tc) Chassis Mount SO... |
DataSheet: | APT50N60JCU2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 3mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The APT50N60JCU2 is a high-voltage N-channel MOSFET. It is a single device with the most common type available in the TO-220AB package. The device is made from Silicon and is rated for working at a voltage of 600V and a peak current of 19A. It is also capable of dissipating energy of 120W. It is suitable for many different applications, involving switching, power transfer and amplification.
One of the main features of the APT50N60JCU2 is its high-voltage capability. This makes it well suited to applications like high voltage power supplies, motor control systems and lighting systems. The device can also be used in audio equipment and high-current switching applications. Furthermore, it can be used as a phase-shifting element, converters and motor starters.
The APT50N60JCU2 also has a high-speed switching capability, which is important in applications such as power converters and current regulator circuits. Its high speed makes it suitable for operations with switching frequencies up to 1MHz. It also has low on-state resistance and low gate charge, ensuring low power losses.
The working principle of the APT50N60JCU2 is based on a MOSFET structure, where an electric field controls the flow of current between the source and drain. The device has a gate terminal, which is connected to a voltage source and is used to control the amount of current flowing between the source and drain terminals. The APT50N60JCU2 has a threshold voltage of 8V, which is the voltage required to turn the device on.
The APT50N60JCU2 is able to handle a maximum drain voltage of 600V and can dissipate up to 120W of power. This makes it well suited to many different applications, such as high-voltage switching, power transfer, motor control and audio equipment. The device has a low gate charge, ensuring low power losses and making it suitable for operations with switching frequencies up to 1MHz.
In conclusion, the APT50N60JCU2 is a high-voltage N-channel MOSFET, suitable for many different applications. It is rated for a voltage of 600V, a peak current of 19A and can dissipate energy of 120W. It has a low gate charge and a high speed switching capability, making it suitable for operations with switching frequencies up to 1MHz. Therefore, it is suitable for applications such as high-voltage switching, power transfer, motor control and audio equipment.
The specific data is subject to PDF, and the above content is for reference
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