Allicdata Part #: | APT53F80J-ND |
Manufacturer Part#: |
APT53F80J |
Price: | $ 45.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 57A SOT-227 |
More Detail: | N-Channel 800V 57A (Tc) 960W (Tc) Chassis Mount IS... |
DataSheet: | APT53F80J Datasheet/PDF |
Quantity: | 41 |
1 +: | $ 41.54220 |
10 +: | $ 39.10160 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 570nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 43A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT53F80J is a highly integrated, low-power, single-channel logic level N-Channel MOSFET that is designed for automated test equipment, computer peripheral components and other systems requiring high-density and low-current drive capability. It contains two integrated power MOSFETs, one of which is optimized for the highest speed and low-side switching, and the other for low-noise and low-impedance drain-source applications. The APT53F80J is a highly reliable device, with low on-state resistance and excellent thermal stability, making it ideal for use in a wide variety of applications.
The APT53F80J is designed to provide power MOSFETs with low input capacitance and high speed switching, making it ideal for applications that require high capability and low-power operation. The core power MOSFETs has a low on-state resistance and fast switching times, enabling the device to handle high-power load current levels, while ensuring fast and reliable performance. The unique design of the APT53F80J also makes it suitable for high-reliability and high-temperature operation, with an operating temperature range of -40°C to 150°C.
The APT53F80J is a highly integrated device, with an integrated logic-level MOSFET and adjustable drain-source voltage. This ensures low noise, fast switching, and low power consumption. The adjustable drain-source voltage enables precise control of the drain-source voltage and can be adjusted in steps of 0.5 V, allowing precise control of output power and optimized switching performance.
When used in high-power applications, the APT53F80J features high-performance drain-source amplifiers that can handle a large load current. The core MOSFETs also have a low on-state resistance and excellent thermal stability, which are essential for reliable operation.
The APT53F80J is suitable for a variety of applications, including power switches, motor power stages, and automated test equipment. In motor power stages, the device is designed to provide precise control and fast switching, ensuring optimum performance and reliability. In automated test equipment, the APT53F80J provides high-density and low-power drive capability, making it ideal for high-density, power-sensitive applications.
In summary, the APT53F80J is a highly integrated single-channel logic level N-Channel MOSFET. It provides low input capacitance, high-speed switching, low on-state resistance, excellent thermal stability, adjustable drain-source voltage, and high-reliability. This makes it ideal for demanding applications, including power switches, motor power stages, and automated test equipment.
The specific data is subject to PDF, and the above content is for reference
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