| Allicdata Part #: | APT56M60B2-ND |
| Manufacturer Part#: |
APT56M60B2 |
| Price: | $ 11.49 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 600V 56A T-MAX |
| More Detail: | N-Channel 600V 60A (Tc) 1040W (Tc) Through Hole TO... |
| DataSheet: | APT56M60B2 Datasheet/PDF |
| Quantity: | 1000 |
| 60 +: | $ 10.44490 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | TO-247-3 Variant |
| Supplier Device Package: | TO-247 [B] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1040W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11300pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 28A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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APT56M60B2 is a silicon carbide (SiC) Metal Oxide Semiconductor Field-effect Transistor (MOSFET). It combines the advantages of the SiC material, such as wide band gap, high breakdown voltage, and high temperature stability, with the high-frequency switching capability of the MOSFET.
The APT56M60B2 is designed for use in high-frequency switching applications, power conversion applications, high-voltage power supplies, and motor control. It is available in die form or in a full, hermetically sealed module. It can handle up to 600A of continuous current and has an on-state resistance of 6mΩ.
The design of the APT56M60B2 is such that it will perform robustly even under extreme conditions. It can withstand voltages up to 600V and temperatures up to 150°C. It is also highly efficient, with an on-state resistance of 6mΩ and a switching frequency of up to 1MHz.
The working principle of the APT56M60B2 is based on the MOSFET, which is a voltage-controlled device. A MOSFET is composed of a substrate (the semiconductor material), a gate electrode, and a drain-source region. When a voltage is applied to the gate electrode, an electric field is created, which modulates the conductivity of the channel between the source and the drain. The source is usually connected to ground while the drain is connected to the load.
The APT56M60B2 is a specifically designed MOSFET, which allows it to be used in high-voltage, high-temperature applications. Its wide band gap provides higher breakdown voltage and greater temperature stability than conventional MOSFETs. Its on-state resistance is also lower, allowing it to switch more efficiently. The APT56M60B2 also features improved protection diodes for greater protection against voltage spikes and fast switching for quicker response times.
In conclusion, the APT56M60B2 is an ideal choice for applications requiring high-voltage switching and efficient power conversion. It offers robust performance in extreme environments, and its wide band gap and low on-state resistance make it an ideal solution for a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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APT56M60B2 Datasheet/PDF