APTCV60HM45RT3G Allicdata Electronics
Allicdata Part #:

APTCV60HM45RT3G-ND

Manufacturer Part#:

APTCV60HM45RT3G

Price: $ 36.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: POWER MOD IGBT3 FULL BRIDGE SP3
More Detail: IGBT Module Trench Field Stop Full Bridge Inverter...
DataSheet: APTCV60HM45RT3G datasheetAPTCV60HM45RT3G Datasheet/PDF
Quantity: 1000
100 +: $ 33.50370
Stock 1000Can Ship Immediately
$ 36.86
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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The APTCV60HM45RT3G is an Insulated Gate Bipolar Transistor (IGBT) module system specifically designed for motor control applications. This module is a compact device that contains both an Insulated Gate Bipolar Transistor (IGBT) and a diode system. It features superior switching performance, advanced control features and fault protection functions, high current and power capability, and substantial power and thermal savings compared to a traditional system.

The working principle of an IGBT module is based on the interaction between the three main components: an Insulated Gate Bipolar Transistor (IGBT), a gate drive circuit, and a protective diode. The IGBT is a three terminal device that consists of an n-type layer, a p-type layer, and a gate connection. The gate drive circuit is an electronic circuit that is used to supply current to the gate of the IGBT and to turn the IGBT off when needed. The protective diode is used to protect the IGBT from the reverse recovery current of the diode.

In a motor control application, the IGBT module is used as a switch to control the current and power of the motor. When the gate voltage is increased, the IGBT turns on and the current flows through the motor to the load. When the gate voltage is decreased, the IGBT turns off, and the current stops flowing. The protective diode also helps to protect the IGBT from possible damage due to causing over-voltages across the load.

The APTCV60HM45RT3G is usually used in applications such as motor control, energy conversion, motor drives, inverters and uninterruptible power supplies (UPS). The IGBT module is also used for adjustable frequency drives (AFD) and other power supplies.

The APTCV60HM45RT3G IGBT module system is an ideal solution for applications where efficient, reliable, and cost effective power control is required. The module features high surge capabilities, low power dissipation, fast switching times, robust construction, and a wide operating temperature range.

In conclusion, the APTCV60HM45RT3G is an Insulated Gate Bipolar Transistor (IGBT) module system that is specifically designed for efficient and cost-effective motor control applications. It features an IGBT, a gate drive circuit, and a protective diode. The working principle of an IGBT module is based on the interaction between the three main components. It is used for motor control, energy conversion, motor drives, inverters and uninterruptible power supplies (UPS), adjustable frequency drives (AFD) and other power supplies. Its high surge capabilities, low power dissipation, fast switching times, robust construction, and wide operating temperature range make it an ideal solution for power control applications.

The specific data is subject to PDF, and the above content is for reference

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