ATP101-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | ATP101-TL-HOSTR-ND |
Manufacturer Part#: |
ATP101-TL-H |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 25A ATPAK |
More Detail: | P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPA... |
DataSheet: | ATP101-TL-H Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17040 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | ATPAK (2 leads+tab) |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 875pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ATP101-TL-H is classified as a single metal oxide semiconductor field effect transistor (MOSFET). It is a high-performance general-purpose device that can be used for a wide variety of applications. This type of MOSFET is often used for high-voltage switching or power conversion applications, as well as for motor control, audio amplification, and other applications that require a high-power device.
A MOSFET operates by utilizing an electric field to control the conductivity of a semiconductor material. These devices consist of a metal gate that is connected to a source of voltage, a drain that is connected to a drain terminal, and a channel in between. When a voltage is applied to the gate, it creates an electrostatic field that changes the resistance of the channel, allowing electrons to flow either in or out of the channel. This changes the resistance of the channel, which allows current to flow. The ATP101-TL-H MOSFET is specifically designed to provide efficient power control in high voltage applications. It is specifically designed with a rugged construction that allows it to operate reliably and safely at very high voltages. It also features a low on-state resistance (RDS (on)) and low gate charge (Qg) to maximize power efficiency and reduce power dissipation. The ATP101-TL-H MOSFET also features a high dielectric strength, meaning that it is able to operate reliably in high voltage environments. It is also able to survive short-circuit conditions and current surge events, further ensuring its reliability and safety. Additionally, the device features low-noise performance, making it suitable for applications where noise and precise timing are of critical importance. The ATP101-TL-H MOSFET is also designed with a high-temperature operation capability, meaning that it is able to operate reliably at temperatures up to 150°C. This makes it suitable for use in high-temperature environments, as well as in extreme conditions that require reliable operational performance.
The ATP101-TL-H MOSFET is a general-purpose device that can be used in a variety of applications. From low-noise audio amplification to high-voltage switching and power conversion. The device’s combination of rugged construction, low RDS (on) and Qg values, and high-temperature operation ensure reliable operation and safety in a wide range of conditions.
The specific data is subject to PDF, and the above content is for reference
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