ATP102-TL-H Discrete Semiconductor Products |
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| Allicdata Part #: | 869-1073-2-ND |
| Manufacturer Part#: |
ATP102-TL-H |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 30V 40A ATPAK |
| More Detail: | P-Channel 30V 40A (Ta) 40W (Tc) Surface Mount ATPA... |
| DataSheet: |  ATP102-TL-H Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.22219 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | ATPAK (2 leads+tab) |
| Supplier Device Package: | ATPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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ATP102-TL-H Application Field and Working Principle
ATP102-TL-H is a high-reliability, high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device with package options of TO-252-4, TO-220-4 and DPAK-4 for automotive systems and industrial applications. The device is developed for applications that require low on-state resistance, fast switching and up to 400V drain source voltage.
The outstanding features of the device includes high performance, high reliability, low on-state resistance, fast switching, wide operating temperature range and cost efficient package options. All this makes it an ideal choice for automotive and industrial applications.
The primary purpose of the device is to act as a switch. It allows current to flow through it when a voltage is applied to its gate terminal, and blocks the current flow when the voltage is removed. The device can also be used as an amplifier. In this mode, it modulates the voltage applied to its gate to control the current flow through it.
The ATP102-TL-H device is manufactured using a silicon MOSFET process which enables high reliability with low on-resistance performance. The device also provides high power density and fast switching speed. The device has maximum drain-source voltage of 400V and offers a breakdown voltage of 600V.
The device works on the principle of gate control of the current flow. When a voltage is applied to the gate of the device, it controls the current flow between the drain and the source. The gate control also results in low on-state resistance and fast switching time of the device. The device also offers a wide operating temperature range of -55°C to +175°C.
The ATP102-TL-H device is widely used in automotive and industrial applications. In automotive systems, it is used in various applications like ABS brakes, power windows, starter motors, fuel pumps and HVAC systems. It is also used in industrial applications like heaters, relays, industrial speed controls, motor circuits and transducers.
The ATP102-TL-H device offers various benefits such as low on-state resistance, fast switching, wide operating temperature range, low gate control and high power density. It is thus designed in a cost-effective approach. The device is also available in a variety of package options including TO-252-4, TO-220-4 and DPAK-4, giving additional room for choice to the user. With a low price tag and reliability, the ATP102-TL-H is an ideal choice for a variety of automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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