
ATP113-TL-H Discrete Semiconductor Products |
|
Allicdata Part #: | 869-1077-2-ND |
Manufacturer Part#: |
ATP113-TL-H |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 35A ATPAK |
More Detail: | P-Channel 60V 35A (Ta) 50W (Tc) Surface Mount ATPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.38442 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | ATPAK (2 leads+tab) |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 29.5 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are an integral component of the modern electronics industry, responsible for connecting and controlling the various components that make up our electronics. One particular transistor, known as the ATP113-TL-H, is a single-gate, junctionless field-effect transistor that has found numerous applications in the various fields of electrical engineering. This article will focus on the various applications and principles of operation of the ATP113-TL-H.
The ATP113-TL-H transistor is a versatile component that can be used in a variety of electrical circuits. It is commonly used in digital, analog, and power supply circuits; as a voltage gain and level shifter; and as a switch or amplifier component in audio and communications systems. Its small size and low power consumption have made it a popular choice for applications where size and cost are a priority.
As a single-gate junctionless FET, the ATP113-TL-H utilizes a unique design to optimize its performance. It is composed of a high-quality silicon semiconductor material with a thin gate dielectric layer, a lightly doped source region, and a lightly doped drain region. The source and drain regions are typically separated by a thin insulating layer, which reduces the leakage current of the transistor.
The source and drain regions of the transistor are connected to external circuitry, and a bias voltage is applied to the gate to control the flow of electrons between the two regions. When a positive voltage is applied to the gate, electrons are forced from the source to the drain region, and when a negative voltage is applied, electrons are forced from the drain to the source. This phenomenon, known as "channel pinch-off," is the basis of the transistor\'s operation and is the primary mechanism responsible for controlling current flow in the device.
The ATP113-TL-H has a wide range of applications due to its versatility. This transistor is often used in high-speed data switching circuits, as the speed and low gate capacitance of the device make it ideal for high-speed applications. It can also be used in analog circuits as an amplifier or level shifter. The small size of the device makes it ideal for applications where physical space is limited, such as mobile phones and other handheld devices. The device also has low power consumption and can be used in battery-powered applications as well.
The ATP113-TL-H is well-suited for applications that require a high input impedance and wide bandwidth. This device has a relatively low input capacitance, allowing it to handle high frequencies without compromising performance. It is also highly reliable, with little variation in its performance when subject to temperature, voltage, and other environmental conditions.
The ATP113-TL-H has established itself as a versatile and reliable component for a variety of applications. Its combination of small size, low power consumption, high input impedance, and wide bandwidth make it an ideal choice for a variety of applications in various fields of electrical engineering. For these reasons, the ATP113-TL-H is likely to remain a popular choice for many applications in the years to come.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ATP1-10006KV | Belden Inc. | 6.42 $ | 1000 | 1DB-1GHZ ATTENUATOR |
ATP107-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 40V 50A ATPAK... |
ATP101-TL-H | ON Semicondu... | 0.19 $ | 1000 | MOSFET P-CH 30V 25A ATPAK... |
ATP16-10006KV | Belden Inc. | 6.42 $ | 1000 | 16DB-1GHZ ATTENUATOR |
ATP103-TL-H | ON Semicondu... | 0.33 $ | 1000 | MOSFET P-CH 30V 55A ATPAK... |
ATP104-TL-H | ON Semicondu... | 0.46 $ | 1000 | MOSFET P-CH 30V 75A ATPAK... |
ATP108-TL-H | ON Semicondu... | 0.48 $ | 1000 | MOSFET P-CH 40V 70A ATPAK... |
ATP10-10006KV | Belden Inc. | 6.42 $ | 1000 | 10DB-1GHZ ATTENUATOR |
ATP102-TL-H | ON Semicondu... | 0.25 $ | 1000 | MOSFET P-CH 30V 40A ATPAK... |
ATP106-TL-H | ON Semicondu... | -- | 3000 | MOSFET P-CH 40V 30A ATPAK... |
ATP104-TL-HX | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 75A ATPAK... |
ATP114-TL-H | ON Semicondu... | 0.44 $ | 1000 | MOSFET P-CH 60V 55A ATPAK... |
ATP101-V-TL-H | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 25A ATPAK... |
ATP113-TL-H | ON Semicondu... | 0.42 $ | 1000 | MOSFET P-CH 60V 35A ATPAK... |
ATP112-TL-H | ON Semicondu... | -- | 3000 | MOSFET P-CH 60V 25A ATPAK... |
ATP101-TL-HX | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH DPAKP-Channel... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
