ATP112-TL-H Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	--
Package / Case:	ATPAK (2 leads+tab)
Supplier Device Package:	ATPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1450pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	33.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	43 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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ATP112-TL-H is an N-Channel Enhancement Mode Field Effect Transistor (FETs). This FET offers superior reliability, higher power dissipation and ruggedized design to achieve high environmental stress. It is a monolithic MOSFET which is also known as a single-ended power MOSFET and is ideal for automotive application.The monolithic MOSFETs form the backbone of modern power electronics. It consists of a single active semiconductor layer which is sandwiched between two conductive metal gates. This makes the device more reliable and robust over traditional junction FETs. It also provides improved performance in terms of power handling and switching frequency.ATP112-TL-H is designed for enhanced current drive capacities and improved power efficiency in a variety of applications. It is mainly used in automotive, battery, industrial and high power applications. It is also suitable for high switching frequency applications such as motor control, resonant converters, high frequency inverters and high frequency applications.The ATP112-TL-H can be used as either a power switch or as a low side switch. When used as a power switch, it can be employed in high frequency switching applications up to a maximum frequency of 25MHz. The power switch supports operation up to a maximum drain-source voltage of 100V and a maximum drain current of 32A. When used as a low side switch, it can be employed in low frequency current control, peak current control and voltage control applications up to a maximum frequency of 5MHz. The low side switch supports operating a maximum drain-source voltage of 40V and a maximum drain current of 14A.The working principle of the ATP112-TL-H involves a structure which contains four independent N-channel enhancement mode MOSFETs in a compact arrangement. This device has the ability to operate in either linear or non-linear mode depending on the gate and drain source voltage. When the gate voltage is less than the threshold voltage and the drain source voltage is not more than the rated limitation, the device will be in the linear mode. In this mode, the current between the drain and the source is proportional to the gate voltage and is determined by the gate to source voltage. When the gate and drain source voltage exceeds the threshold voltage, the device will be in the non-linear mode. In the non-linear mode, the current flows between the drain and source is not directly proportional to the gate voltage.Overall, the ATP112-TL-H is a powerful and reliable MOSFET that provides excellent performance in various automotive and other applications. It offers improved current drive capacities and power efficiency by providing low on-resistance and high-performance through its monolithic construction.

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