ATP103-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | ATP103-TL-HOSTR-ND |
Manufacturer Part#: |
ATP103-TL-H |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 55A ATPAK |
More Detail: | P-Channel 30V 55A (Ta) 50W (Tc) Surface Mount ATPA... |
DataSheet: | ATP103-TL-H Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29546 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | ATPAK (2 leads+tab) |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2430pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ATP103-TL-H is a low power n-channel enhancement mode Field-Effect Transistor (FET) that is designed for general purpose switching and amplification applications. It is optimal for use in applications such as power management, data communications, and computing. As a low power components, it can operate up to 4 volts with a drain-source voltage (Vdss) to 3 volts maximum. The ATP103-TL-H is a single FET with a relatively low value drain-channel resistance (Rdson) of 0.14 ohms. Since it has an on resistance (Rdson) that is low, it can switch quickly and reduce power consumption. Due to its low voltage and relatively low Rdson, it can also serve as an amplifier, allowing signal voltage and current to pass through with minimal power consumption.
The ATP103-TL-H utilizes a depletion mode. This mode is characterized by its high input impedance and ability to conduct in absence of gate-source voltage. This is because the source-gate voltage is always below the source-drain voltage. Therefore, the gate region is normally turned on and currents can flow through it even in absence of an input voltage. This mode is well suited for a wide range of applications, but it is most often used in amplifiers and logic gates.
This type of FET is manufactured using a silicon die which is attached to a metal gate electrode. The gate electrode then creates an electric field which depletes the substrate and forms a channel. The depletion region acts to limit current flow, allowing the FET to function as an amplifier. The ATP103-TL-H is also equipped with a pinch-off voltage that turns the transistor off when it detects a voltage greater than the pinch-off voltage. This makes the FET suitable for low power applications because it will turn off automatically when a voltage greater than the pinch-off voltage is applied.
The ATP103-TL-H is suitable for many applications ranging from data communications and computer to power management. In power management systems, this device can be used to deliver power from a source to an external device in a very efficient manner. Due to its low Rdson and high switching speed, it can rapidly switch between on and off states, reducing power consumption and improving system performance. In data communications, it can be used to deliver signals from one device to another. The low power characteristics of this device make it ideal for use in digital circuits, helping to reduce power consumption in the system.
The ATP103-TL-H is a good option for many general purpose applications. It is ideal for applications such as power management, data communications, and computing. Due to its low Rdson and high switching speed, it can rapidly switch between on and off states, reducing power consumption and improving system performance. It is also equipped with a pinch-off voltage which automatically turns the transistor off when a voltage greater than the pinch-off voltage is applied. Its low voltage and small form factor make it ideal for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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