ATP106-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | 869-1075-2-ND |
Manufacturer Part#: |
ATP106-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 40V 30A ATPAK |
More Detail: | P-Channel 40V 30A (Ta) 40W (Tc) Surface Mount ATPA... |
DataSheet: | ATP106-TL-H Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | ATPAK (2 leads+tab) |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ATP106-TL-H is a single-terminal MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that is used in a range of applications. It is a versatile piece of technology that is capable of offering high levels of power control and efficiency. This means that it can be used in everything from automotive and consumer electronics to medical, industrial, and aerospace applications. In this article, we will take a closer look at the ATP106-TL-H and its application field and working principle.
Application Field
The ATP106-TL-H offers high-power control and reliability for a variety of applications, including automotive and consumer electronics. It is a type of MOSFET that is capable of controlling large loads at up to 100A continuous or 175A peak current levels. It has a wide range of operating temperatures, from -40°C to 175°C. The device is also capable of high current switching, making it a great choice for automotive and consumer electronics.
The device is also designed to be used in high temperature environments. It has a low drain-source breakdown voltage of 25V and is also capable of operating at high temperature with no noticeable degradation, making it a great choice for applications such as medical, industrial, and aerospace.
Working Principle
The ATP106-TL-H MOSFET detects electric fields and can be used to switch electronic signals on and off. It works by detecting an electric field, usually produced by the application of an electric voltage, between the layer of metal and the layer of oxide in the device. This electric field causes the charge of the oxide layer to change, resulting in a change in the device’s electrical resistance, which can be used to turn the current flow in a circuit on and off.
The ATP106-TL-H is a fast-switching MOSFET, so it is particularly well suited for applications that require high-frequency switching and a low power loss. This makes it ideal for power control applications in computers, mobile phones, and other devices that require high-speed operation.
In addition to its fast switching capabilities, the device also has a wide range of operating temperatures and a high maximum gate voltage of 175V, which makes it an ideal choice for applications that require high-voltage switching.
Conclusion
The ATP106-TL-H is an extremely versatile single-terminal MOSFET that is capable of providing high-power control and efficiency for a wide range of applications such as automotive and consumer electronics, medical, industrial, and aerospace. Its wide temperature range and fast switching capabilities make it an excellent choice for a broad range of applications. Furthermore, its low drain-source breakdown voltage of 25V and high maximum gate voltage of 175V make it suitable for high voltage switching. Thanks to its exceptional level of power control and reliability, the ATP106-TL-H is an extremely useful piece of technology.
The specific data is subject to PDF, and the above content is for reference
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