ATP201-V-TL-H Allicdata Electronics
Allicdata Part #:

ATP201-V-TL-H-ND

Manufacturer Part#:

ATP201-V-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 35A ATPAK
More Detail: MOSFET N-CH 30V 35A ATPAK
DataSheet: ATP201-V-TL-H datasheetATP201-V-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)
Description

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.

The ATP201-V-TL-H is a type of single transistor, specifically a small signal MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), designed for linear voltage regulating and amplifying applications.

The ATP201-V-TL-H consists of three pins -- the gate, drain and source -- as well as a package that includes the die, as well as the necessary components to ensure optimal thermal performance, such as capacitors and resistors.

The gate is the control terminal of the transistor, and it is the voltage applied to this pin that controls the flow of current through the transistor. The drain and the source pins serve as the input and output points between the transistor and the circuit, and the current flows from the drain to the source. The gate-to-source, or G-S, voltage is the voltage difference between the gate and the source of the transistor, and this is what is used to control the current flowing through the transistor.

The ATP201-V-TL-H has an avalanche breakdown voltage value of -10 Volts, and a continuous drain current rating of up to 200mA, making it suitable for high power applications. It also has a low drain-source on-resistance of 1.3 Ohms. This resistance value is important, as it determines how much power is lost during the conduction of current through the transistor.

In terms of its application field, the ATP201-V-TL-H is a good choice for wide bandgap amplifiers, as well as low dropout linear voltage regulators, voltage multipliers and other power management applications, where the low on-resistance ensures an increased efficiency. It is also well suited for audio applications, as the low resistance and controlled G-S voltage help provide a clean, well-defined sound.

In conclusion, the ATP201-V-TL-H is a single MOSFET transistor designed for wide bandgap amplifiers, linear voltage regulators and other power management applications, along with audio processing. Its low on-resistance and avalanche breakdown voltage of -10 Volts makes it ideal for high power applications, albeit with a maximum continuous drain current of 200mA.

The specific data is subject to PDF, and the above content is for reference

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